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HCS08 bảng dữ liệu(PDF) 368 Page - NXP Semiconductors |
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HCS08 bảng dữ liệu(HTML) 368 Page - NXP Semiconductors |
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368 / 374 page ![]() Appendix A Electrical Characteristics MC9S08JM60 Series Data Sheet, Rev. 5 368 Freescale Semiconductor A.14 USB Electricals The USB electricals for the S08USBV1 module conform to the standards documented by the Universal Serial Bus Implementers Forum. For the most up-to-date standards, visit http://www.usb.org. If the Freescale S08USBV1 implementation has electrical characteristics that deviate from the standard or require additional information, this space would be used to communicate that information. A.15 EMC Performance Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board design and layout, circuit topology choices, location and characteristics of external components as well as MCU software operation all play a significant role in EMC performance. The system designer must consult Freescale applications notes such as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance. A.15.1 Radiated Emissions Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test software. The radiated emissions from the microcontroller are measured in a TEM cell in two package orientations (North and East). For more detailed information concerning the evaluation results, conditions and setup, please refer to the EMC Evaluation Report for this device. The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal to the reported emissions levels. 2 The frequency of this clock is controlled by a software setting. 3 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating approximate time to program and erase. 4 Typical endurance for Flash is based on the intrinsic bitcell performance. For additional information on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory. 5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25 °C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory. Table A-17. Internal USB 3.3V Voltage Regulator Characteristics Symbol Unit Min Typ Max Regulator operating voltage Vregin V 3.9 — 5.5 VREG output Vregout V3 3.3 3.6 VUSB33 input with internal VREG disabled Vusb33in V3 3.3 3.6 VREG Quiescent Current IVRQ mA — 0.5 — |
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