HCS08 datasheet(367/374 Pages) NXP

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Appendix A Electrical Characteristics

MC9S08JM60 Series Data Sheet, Rev. 5

Freescale Semiconductor

367

Figure A-13. SPI Slave Timing (CPHA = 1)

A.13 Flash Specifications

This section provides details about program/erase times and program-erase endurance for the flash

memory.

Program and erase operations do not require any special power sources other than the normal VDD supply.

For more detailed information about program/erase operations.

Table A-16. Flash Characteristics

Num

Characteristic

Symbol

Min

Typ1

1 Typical values are based on characterization data at V

DD = 5.0 V, 25°C unless otherwise stated.

Max

Unit

Supply voltage for program/erase

Vprog/erase

2.7

5.5

Supply voltage for read operation

VRead

2.7

5.5

Internal FCLK frequency2

fFCLK

150

200

kHz

Internal FCLK period (1/FCLK)

tFcyc

56.67

μs

Byte program time (random location)(2)

tprog

9tFcyc

Byte program time (burst mode)(2)

tBurst

4tFcyc

Page erase time3

tPage

4000

tFcyc

Mass erase time(2)

tMass

20,000

tFcyc

Program/erase endurance4

TL to TH = –40°C to + 85°C

T = 25

°C

10,000

—

100,000

—

cycles

Data retention5

tD_ret

100

—

years

SCK

(INPUT)

SCK

(INPUT)

MOSI

(INPUT)

MISO

(OUTPUT)

MSB IN

BIT 6 . . . 1

LSB IN

MSB OUT

SLAVE LSB OUT

BIT 6 . . . 1

SEE

(CPOL = 0)

(CPOL = 1)

(INPUT)

NOTE:

SLAVE

NOTE

1. Not defined but normally LSB of character just received

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