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HCS08 bảng dữ liệu(PDF) 281 Page - Motorola, Inc |
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HCS08 bảng dữ liệu(HTML) 281 Page - Motorola, Inc |
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281 / 290 page ![]() Data Sheet — MC9S08GB60/D V1.5 MOTOROLA 281 MC9S08GB/GT A.10 FLASH Specifications This section provides details about program/erase times and program-erase endurance for the FLASH memory. Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed information about program/erase operations, see the Memory section. Table A-13 FLASH Characteristics Characteristic Symbol Min Typical Max Unit Supply voltage for program/erase Vprog/erase 2.1 3.6 V Supply voltage for read operation 0 < fBus < 8 MHz 0 < fBus < 20 MHz VRead 1.8 2.08 3.6 3.6 V Internal FCLK frequency(1) NOTES: 1. The frequency of this clock is controlled by a software setting. fFCLK 150 200 kHz Internal FCLK period (1/FCLK) tFcyc 5 6.67 µs Byte program time (random location)(2) tprog 9 tFcyc Byte program time (burst mode)(2) tBurst 4 tFcyc Page erase time(2) 2. These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for calculating approximate time to program and erase. tPage 4000 tFcyc Mass erase time(2) tMass 20,000 tFcyc Program/erase endurance(3) TL to TH = –40°C to + 85°C T = 25 °C 3. Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how Motorola defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory. 10,000 100,000 — — cycles Data retention(4) 4. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to 25 °C using the Arrhenius equation. For additional information on how Motorola defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory. tD_ret 15 100 — years |
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