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HCS08 bảng dữ liệu(PDF) 281 Page - Motorola, Inc

tên linh kiện HCS08
Giải thích chi tiết về linh kiện  Microcontrollers
PDF  290 Pages
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nhà sản xuất  MOTOROLA [Motorola, Inc]
Trang chủ  http://www.freescale.com
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HCS08 bảng dữ liệu(HTML) 281 Page - Motorola, Inc

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Data Sheet — MC9S08GB60/D V1.5
MOTOROLA
281
MC9S08GB/GT
A.10 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
For more detailed information about program/erase operations, see the Memory section.
Table A-13 FLASH Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
Vprog/erase
2.1
3.6
V
Supply voltage for read operation
0 < fBus < 8 MHz
0 < fBus < 20 MHz
VRead
1.8
2.08
3.6
3.6
V
Internal FCLK frequency(1)
NOTES:
1. The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
Internal FCLK period (1/FCLK)
tFcyc
5
6.67
µs
Byte program time (random location)(2)
tprog
9
tFcyc
Byte program time (burst mode)(2)
tBurst
4
tFcyc
Page erase time(2)
2. These values are hardware state machine controlled. User code does not need to count cycles. This
information supplied for calculating approximate time to program and erase.
tPage
4000
tFcyc
Mass erase time(2)
tMass
20,000
tFcyc
Program/erase endurance(3)
TL to TH = –40°C to + 85°C
T = 25
°C
3. Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional
information on how Motorola defines typical endurance, please refer to Engineering Bulletin EB619/D,
Typical Endurance for Nonvolatile Memory.
10,000
100,000
—
—
cycles
Data retention(4)
4. Typical data retention values are based on intrinsic capability of the technology measured at high
temperature and de-rated to 25
°C using the Arrhenius equation. For additional information on how
Motorola defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data
Retention for Nonvolatile Memory.
tD_ret
15
100
—
years



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