HCS08 datasheet(311/316 Pages) NXP

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Appendix A Electrical Characteristics

MC9S08SG8 MCU Series Data Sheet, Rev. 8

Freescale Semiconductor

311

A.13

FLASH Specifications

This section provides details about program/erase times and program-erase endurance for the FLASH

memory.

Program and erase operations do not require any special power sources other than the normal VDD supply.

For more detailed information about program/erase operations, see the Memory section.

Table A-16. FLASH Characteristics

Characteristic

Symbol

Min

Typical

Max

Unit

Temp Rated1

1 Electrical characteristics only apply to the temperature rated devices marked with x.

Stand

ard

AEC

Grade

1—

Supply voltage for

program/erase

Vprog/erase

2.7

5.5

2—

Supply voltage for read

operation

VRead

2.7

5.5

—

Internal FCLK frequency2

The frequency of this clock is controlled by a software setting.

fFCLK

150

200

kHz



—

Internal FCLK period (1/fFCLK)tFcyc

56.67

sx

5—

Byte program time (random

location)3

3 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for

calculating approximate time to program and erase.

tprog

9tFcyc

6—

Byte program time (burst

mode)2

tBurst

4tFcyc

—

Page erase time2

tPage

4000

tFcyc

—

Mass erase time2

tMass

20,000

tFcyc

Program/erase endurance4

TL to TH = –40C to +125C

TL to TH = –40C to +150C

T = 25

C

4 Typical endurance for FLASH is based on the intrinsic bit cell performance. For additional information on how Freescale defines

typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.

nFLPE

10,000

—

100,000

—

cycles

—

Data retention5

5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to

C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to

Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.

tD_ret

100

—

years

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