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SH33F2801P/032PR bảng dữ liệu(PDF) 28 Page - SINOWEALTH Electronic Ltd |
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SH33F2801P/032PR bảng dữ liệu(HTML) 28 Page - SINOWEALTH Electronic Ltd |
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28 / 407 page ![]() SH33F2801 28 8.3.3.2 Flash Control Register Unlock After the system is reset, the flash memory operation register is locked, so the flash memory operation register needs to be unlocked before performing erasure programming operation on flash. Different flash memory blocks have different unlock registers, and corresponding registers need to be unlocked to execute operations to different blocks. To unlock flash, two unlocking values are required to be written to the corresponding unlock register. Whenever writing error occurs on the first or the second key value, the corresponding flash block cannot be unlocked, and a bus error will be generated. Unlocking the unlock register when any one block is unlocked will also generate a bus error. There are also two cases on flash unlocking operations. One is to perform a single operation on flash after unlocking, while the other to perform multiple operations on flash after unlocking. If the flash memory operation register is in unlock state, the flash memory block can be erased and programmed by controlling FLASH_CR. After reset, bit MNLCK@FLASH_CR is set to 1. The FLASH_CR can be unlocked by first writing the flash unlock value 0x8ACE 0246 to the FLASH_MKYR register, then writing the single operation unlock value 0xC3C3 C3C3 or the multiple operation unlock value 0xB4B4 B4B4 to the FLASH_MKYR register. After two correct unlock values writing operations are completed, bit MNLCK@FLASH_CR is cleared by hardware. The software can set the control bit MNLCK@FLASH_CR to 1 to lock the main program block. Main program block is locked by the FLASH_MKYR register. After unlocking, the main program block can be operated by running a program in RAM, running a program in the main program block, running a program in boot block, or directly accessing the flash operation register using a debugging tool. EEPROM-like block of the special information block can be locked by the FLASH_E2KYR register. The unlocking process also contains two write operations. After flash unlock value 0x9BDF 1357 is written to FLASH_E2KYR register, and single operation unlock value 0xC3C3 C3C3 or multiple operation unlock value 0xB4B4 B4B4 is written to FLASH_E2KYR register, this block can be unlocked and the control bit E2LCK@FLASH_CR is cleared by hardware. The software can set the control bit E2LCK@FLASH_CR to 1 to lock the EEPROM-like block of the special information block. It is the EEPROM-like block of the special information block which is locked by FLASH_E2KYR register. After this block is unlocked, operations can be performed by running a program in RAM, running a program in the main program block, running a program in boot block, or directly accessing the flash operation register using a debugging tool. OTP block of the special information block can be locked by the FLASH_IKYR register. The unlocking process also contains two write operations. After flash unlock value 0xABCD 5678 is written to FLASH_IKYR register, and single operation unlock value 0xC3C3 C3C3 or multiple operation unlock value 0xB4B4 B4B4 is written to FLASH_IKYR register, this block can be unlocked and the control bit INFLCK@FLASH_CR is cleared by hardware. The software can set the control bit INFLCK@FLASH_CR to 1 to lock the OTP block of the special information block. It is the OTP block of the special information block which is locked by FLASH_IKYR register. OTP block can be operated by running a program in RAM or a program in the main program block. For flash single unlock operation, after MNLCK@FLASH_CR or E2WRE/INFLCK@FLASH_CR is cleared to 0, only one programming or erasing operation on flash is allowed. After the operation is completed, MNLCK@FLASH_CR or E2WRE/INFLCK@FLASH_CR is automatically set to 1 by hardware, locking the related flash block again. For flash multiple unlock operation, after MNLCK@FLASH_CR or E2WRE/INFLCK@FLASH_CR is cleared to 0, only one programming or erasing operation on flash is allowed. After the operation is completed, MNLCK@FLASH_CR or E2WRE/INFLCK@FLASH_CR must be set to 1 by software, and then the related flash block can be locked again. Table8-4 Unlock Value and Description of Each Unlocking Register Register Function Flash Initial Unlock Value Flash Single Operation Unlock Value Flash Multiple Operation Unlock/Lock Value Description FLASH_M KYR Unlock main program block 0x8ACE 0246 0xC3C3 C3C3 0xB4B4 B4B4 Directly access by running a program in RAM or a program in main program block FLASH_E 2KYR Unlock EEPROM-like block of special information block 0x9BDF 1357 0xC3C3 C3C3 0xB4B4 B4B4 Directly access by running a program in RAM or a program in main program block FLASH_I KYR Unlock OTP block of special information block 0xABCD 5678 0xC3C3 C3C3 0xB4B4 B4B4 Directly access by running a program in RAM or a program in main program block |
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