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CY8C52LP bảng dữ liệu(PDF) 93 Page - Cypress Semiconductor

tên linh kiện CY8C52LP
Giải thích chi tiết về linh kiện  Programmable System-on-Chip (PSoC짰)
PDF  114 Pages
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nhà sản xuất  CYPRESS [Cypress Semiconductor]
Trang chủ  http://www.cypress.com
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CY8C52LP bảng dữ liệu(HTML) 93 Page - Cypress Semiconductor

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PSoC® 5LP: CY8C52LP Family
Datasheet
Document Number: 001-84933 Rev. *L
Page 93 of 114
11.7 Memory
Specifications are valid for –40 °C
 TA  85 °C and TJ  100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
except where noted.
11.7.1 Flash
11.7.2 EEPROM
Note
61. See PSoC 5 Device Programming Specifications for a description of a low-overhead method of programming PSoC 5 flash.
Table 11-42. Flash DC Specifications
Parameter
Description
Conditions
Min
Typ
Max
Units
Erase and program voltage
VDDD pin
1.71
–
5.5
V
Table 11-43. Flash AC Specifications
Parameter
Description
Conditions
Min
Typ
Max
Units
TWRITE
Row write time (erase + program)
–
15
20
ms
TERASE
Row erase time
–
10
13
ms
Row program time
–
5
7
ms
TBULK
Bulk erase time (256 KB)
–
–
140
ms
Sector erase time (16 KB)
–
–
15
ms
TPROG
Total device programming time
No overhead[61]
–
5
7.5
seconds
Flash data retention time, retention
period measured from last erase cycle
Average ambient temp.
TA  55 °C, 100 K erase/program
cycles
20
–
–
years
Average ambient temp.
TA  85 °C, 10 K erase/program
cycles
10
–
–
Table 11-44. EEPROM DC Specifications
Parameter
Description
Conditions
Min
Typ
Max
Units
Erase and program voltage
1.71
–
5.5
V
Table 11-45. EEPROM AC Specifications
Parameter
Description
Conditions
Min
Typ
Max
Units
TWRITE
Single row erase/write cycle time
–
10
20
ms
EEPROM data retention time, retention
period measured from last erase cycle
Average ambient temp, TA  25 °C,
1M erase/program cycles
20
–
–
years
Average ambient temp, TA  55 °C,
100 K erase/program cycles
20
–
–
Average ambient temp. TA 85 °C,
10 K erase/program cycles
10
–
–



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