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IS43LD16640C bảng dữ liệu(PDF) 64 Page - Integrated Silicon Solution, Inc

tên linh kiện IS43LD16640C
Giải thích chi tiết về linh kiện  1Gb (x16, x32) Mobile LPDDR2 S4 SDRAM
PDF  142 Pages
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nhà sản xuất  ISSI [Integrated Silicon Solution, Inc]
Trang chủ  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS43LD16640C bảng dữ liệu(HTML) 64 Page - Integrated Silicon Solution, Inc

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IS43/46LD16640C
IS43/46LD32320C
Integrated Silicon Solution, Inc. — www.issi.com
64
Rev. C
07/02/2021
® Long-term Support
World Class Quality
SELF REFRESH Operation
The SELF REFRESH command can be used to retain data in the array, even if the rest of the
system is powered down. When in the self refresh mode, the device retains data without external
clocking. The device has a built-in timer to accommodate SELF REFRESH operation. The SELF
REFRESH command is executed by taking CKE LOW, CS# LOW, CA0 LOW, CA1 LOW, and CA2
HIGH at the rising edge of the clock.
CKE must be HIGH during the clock cycle preceding a SELF REFRESH command. A NOP com-
mand must be driven in the clock cycle following the SELF REFRESH command.
After the power-down command is registered, CKE must be held LOW to keep the device in self
refresh mode. LPDDR2-S4 devices can operate in self refresh mode in both the standard and ex-
tended temperature ranges. These devices also manage self refresh power consumption
when the operating temperature changes, resulting in the lowest possible power consumption
across the operating temperature range.
After the device has entered self refresh mode, all external signals other than CKE are“Don’t Care.”
For proper self refresh operation, power supply pins (VDD1, VDD2, VDDQ, and VDDCA) must
be at valid levels. VDDQ can be turned off during self refresh. If VDDQ is turned off, VREFDQ
must also be turned off. Prior to exiting self refresh, both VDDQ and VREFDQ must be within their
respective minimum/maximum operating ranges . VREFDQ can be at any level between 0 and
VDDQ; VREFCA can be at any level between 0 and VDDCA during self refresh.
Before exiting self refresh, VREFDQ and VREFCA must be within specified limits (see AC and DC
Logic Input Measurement Levels for Single-Ended Signals . After entering self refresh mode, the
device initiates at least one all-bank REFRESH command internally during tCKESR. The clock is
internally disabled during SELF REFRESH operation to save power. The device must remain in self
refresh mode for at least tCKESR. The user can change the external clock frequency or halt the
external clock one clock after self refresh entry is registered; however, the clock must be restarted
and stable before the device can exit SELF REFRESH operation.
Exiting self refresh requires a series of commands. First, the clock must be stable prior to CKE
returning HIGH. After the self refresh exit is registered, a minimum delay, at least equal to the self
refresh exit interval (tXSR), must be satisfied before a valid command can be issued to the device.
This provides completion time for any internal refresh in progress. For proper operation, CKE must
remain HIGH throughout tXSR, except during self refresh re-entry. NOP commands must be regis-
tered on each rising clock edge during tXSR.
Using self refresh mode introduces the possibility that an internally timed refresh event could be
missed when CKE is driven HIGH for exit from self refresh mode. Upon exiting self refresh, at least
one REFRESH command (one all-bank command or eight per-bank commands) must be issued
before issuing a subsequent SELF REFRESH command.



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