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IS43LD16640C bảng dữ liệu(PDF) 39 Page - Integrated Silicon Solution, Inc

tên linh kiện IS43LD16640C
Giải thích chi tiết về linh kiện  1Gb (x16, x32) Mobile LPDDR2 S4 SDRAM
PDF  142 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  ISSI [Integrated Silicon Solution, Inc]
Trang chủ  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS43LD16640C bảng dữ liệu(HTML) 39 Page - Integrated Silicon Solution, Inc

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IS43/46LD16640C
IS43/46LD32320C
Integrated Silicon Solution, Inc. — www.issi.com
39
Rev. C
07/02/2021
® Long-term Support
World Class Quality
Burst READ Followed by Burst WRITE – RL = 3, WL = 1, BL = 4
The minimum time from the burst READ command to the burst WRITE command is defined
by the read latency (RL) and the burst length (BL). Minimum READ-to-WRITE latency is RL +
RU(tDQSCK(MAX)/tCK) + BL/2 + 1 - WL clock cycles. Note that if a READ burst is truncated
with a burst TERMINATE (BST) command, the effective burst length of the truncated READ burst
should be used for BL when calculating the minimum READ-to-WRITE delay.
Seamless Burst READ – RL = 3, BL = 4, tCCD = 2
A seamless burst READ operation is supported by enabling a READ command at every other
clock cycle for BL = 4 operation, every fourth clock cycle for BL = 8 operation, and every eighth
clock cycle for BL = 16 operation. This operation is supported as long as the banks are activated,
whether the accesses read the same or different banks.



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