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IS43LD16640C bảng dữ liệu(PDF) 10 Page - Integrated Silicon Solution, Inc |
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IS43LD16640C bảng dữ liệu(HTML) 10 Page - Integrated Silicon Solution, Inc |
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10 / 142 page  IS43/46LD16640C IS43/46LD32320C Integrated Silicon Solution, Inc. — www.issi.com 10 Rev. C 07/02/2021 ® Long-term Support World Class Quality 5. ZQ Calibration After tINIT5 (Tf ), the MRR initialization calibration (ZQ_CAL) command can be issued to the memory (MR10). This command is used to calibrate output impedance over process, voltage, and temperature. In systems where more than one LPDDR2 device exists on the same bus, the controller must not overlap MRR ZQ_CAL commands. The device is ready for normal operation after tZQINIT. 6. Normal Operation After tZQINIT (Tg), MRW commands must be used to properly configure the memory . Specifically, MR1, MR2, and MR3 must be set to configure the memory for the target frequency and memory configuration After the initialization sequence is complete, the device is ready for any valid command. After Tg, the clock frequency can be changed using the procedure described in Input Clock Frequency Changes and Clock Stop Events‖. INITIALIZATION TIMING Symbol Parameter Value Unit min max tINIT0 Maximum Power Ramp Time - 20 ms tINIT1 Minimum CKE low time after completion of power ramp 100 - ns tINIT2 Minimum stable clock before first CKE high 5 - tCK tINIT3 Minimum idle time after first CKE assertion 200 - us tINIT4 Minimum idle time after Reset command, this time will be about 2 x tRFCab + tRPab 1 - us tINIT5 Maximum duration of Device Auto-Initialization - 10 us tCKb Clock cycle time during boot 18 100 ns tZQINIT ZQ initial calibration 1 - us Figure - Power Ramp and Initialization Sequence Ta Tb Tc Td Te Tf Tg RESET MRR MRW ZQ_CAL Valid CK/CK# Supplies CKE CA RTT DQ tINIT0 tINIT1 tINIT3 tINIT4 tZQINIT tINIT5 tISCKE tINIT2 Initialization After RESET (without voltage ramp): If the RESET command is issued before or after the power-up initialization sequence, the re-initialization procedure must begin at Td |
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