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IS43LD16640C bảng dữ liệu(PDF) 45 Page - Integrated Silicon Solution, Inc

tên linh kiện IS43LD16640C
Giải thích chi tiết về linh kiện  1Gb (x16, x32) Mobile LPDDR2 S4 SDRAM
PDF  142 Pages
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nhà sản xuất  ISSI [Integrated Silicon Solution, Inc]
Trang chủ  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS43LD16640C bảng dữ liệu(HTML) 45 Page - Integrated Silicon Solution, Inc

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IS43/46LD16640C
IS43/46LD32320C
Integrated Silicon Solution, Inc. — www.issi.com
45
Rev. C
07/02/2021
® Long-term Support
World Class Quality
Burst READ Truncated by BST – RL = 3, BL = 16
Write Data Mask
On LPDDR2 devices, one write data mask (DM) pin for each data byte (DQ) is supported, con-
sistent with the implementation on LPDDR SDRAM. Each DM can mask its respective DQ for any
given cycle of the burst. Data mask timings match data bit timing,
but are inputs only. Internal data mask loading is identical to data bit loading to ensure matched
system timing.
Data Mask Timing
Notes:
1. The BST command truncates an ongoing READ burst (RL × tCK + tDQSCK + tDQSQ) after the rising edge of the clock where
the BST command is issued.
2. BST can only be issued an even number of clock cycles after the READ command.
3. Additional BST commands are not supported after T4 and must not be issued until after the next READ or WRITE command
Data Mask Timing



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