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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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IS43LD16640C bảng dữ liệu(PDF) 52 Page - Integrated Silicon Solution, Inc |
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IS43LD16640C bảng dữ liệu(HTML) 52 Page - Integrated Silicon Solution, Inc |
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52 / 142 page  IS43/46LD16640C IS43/46LD32320C Integrated Silicon Solution, Inc. — www.issi.com 52 Rev. C 07/02/2021 ® Long-term Support World Class Quality From Command To Command Minimum Delay between "From Command" to "To Command" Unit Note s Precharge (to same Bank as Read) BL/2 + max(2, RU(tRTP/tCK)) - 2 clks 1 Precharge All BL/2 + max(2, RU(tRTP/tCK)) - 2 clks 1 Precharge (to same Bank as Read) 1clks1 Precharge All1 clks 1 Precharge (to same Bank as Read w/AP) BL/2 + max(2, RU(tRTP/tCK)) - 2 clks 1,2 Precharge All BL/2 + max(2, RU(tRTP/tCK)) - 2 clks 1 Activate (to same Bank as Read w/AP) BL/2 + max(2, RU( RTP/ CK)) - 2 + RU(tRP /tCK) clks 1 Write or Write w/AP (same bank) illegal clks 3 Write or Write w/AP (different bank) RL + BL/2 + RU(tDQSCKmax/tCK) - WL + 1 clks 3 Read or Read w/AP (same bank) illegal clks 3 Read or Read w/AP (different bank)BL/2clks3 Precharge (to same Bank as Write) WL + BL/2 + RU(tWR/tCK) + 1 clks 1 Precharge All WL + BL/2 + RU(tWR/tCK) + 1 clks 1 Precharge (to same Bank as Write) WL + RU(tWR/tCK) + 1 clks 1 Precharge All WL + RU(tWR/tCK) + 1 clks 1 Precharge (to same Bank as Write w/AP) WL + BL/2 + RU(tWR/tCK) + 1 clks 1 Precharge All WL + BL/2 + RU(tWR/tCK) + 1 clks 1 Activate (to same Bank as Write w/AP) WL + BL/2 + RU(tWR/tCK) + 1 + RU(tRPpb/tCK) clks 1 Write or Write w/AP (same bank) illegal clks 3 Write or Write w/AP (different bank)BL/2clks3 Read or Read w/AP (same bank) illegal clks 3 Read or Read w/AP (different bank) WL + BL/2 + RU(tWTR/tCK) + 1 clks 3 Precharge (to same Bank as Precharge) 1clks1 Precharge All1 clks 1 Precharge 1clks1 Precharge All1 clks 1 Precharge Precharge All LPDDR2-S4: Precharge & Auto Precharge clarification Read BST (for Reads) Read w/AP Write BST (for Writes) Write w/AP LPDDR2-S4: PRECHARGE and Auto Precharge Clarification Notes: 1. For a given bank, the PRECHARGE period should be counted from the latest PRECHARGE command—either a one-bank PRECHARGE or PRECHARGE ALL—issued to that bank. The PRECHARGE period is satisfied after tRP, depending on the latest PRECHARGE command issued to that bank. 2. Any command issued during the specified minimum delay time is illegal. 3. After READ with auto precharge, seamless READ operations to different banks are supported. After WRITE with auto precharge, seamless WRITE operations to different banks are supported. READ with auto precharge and WRITE with auto precharge must not be interrupted or truncated. Following an auto precharge operation, an ACTIVATE command can be issued to the same bank if the following two conditions are satisfied simultaneously: • The RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins. • The RAS cycle time (tRC) from the previous bank activation has been satisfied. |
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