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IS43LD16640C bảng dữ liệu(PDF) 43 Page - Integrated Silicon Solution, Inc |
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IS43LD16640C bảng dữ liệu(HTML) 43 Page - Integrated Silicon Solution, Inc |
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43 / 142 page ![]() IS43/46LD16640C IS43/46LD32320C Integrated Silicon Solution, Inc. — www.issi.com 43 Rev. C 07/02/2021 ® Long-term Support World Class Quality Seamless Burst WRITE – WL = 1, BL = 4, tCCD = 2 WRITEs Interrupted by a WRITE For LPDDR2-S4 devices, a burst WRITE can only be interrupted by another WRITE with a 4-bit burst boundary, provided that tCCD (MIN) is met. A WRITE burst interrupt can occur on any clock after the initial WRITE command, provided that tCCD (MIN) is met. WRITE Burst Interrupt Timing – WL = 1, BL = 8, tCCD = 2 Note: The seamless burst WRITE operation is supported by enabling a WRITE command every other clock for BL = 4 operation, every four clocks for BL = 8 operation, or every eight clocks for BL = 16 operation. This operation is supported for any activated bank. Notes: 1. WRITEs can only be interrupted by other WRITEs or the BST command. 2. The effective burst length of the first WRITE equals two times the number of clock cycles between the first WRITE and the interrupting WRITE |
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