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XM33C321ASPZR bảng dữ liệu(PDF) 47 Page - Texas Instruments |
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XM33C321ASPZR bảng dữ liệu(HTML) 47 Page - Texas Instruments |
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47 / 122 page ![]() over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VBOR1+ Brown-out-reset voltage level 1 Rising (1) 2.13 2.17 2.21 V VBOR1- Falling (1) 2.10 2.14 2.18 VBOR1, STBY STANDBY mode 2.06 2.13 2.215 VBOR2+ Brown-out-reset voltage level 2 Rising (1) 2.73 2.77 2.82 V VBOR2- Falling (1) 2.7 2.74 2.79 VBOR2, STBY STANDBY mode 2.62 2.71 2.8 VBOR3+ Brown-out-reset voltage level 3 Rising (1) 2.88 2.96 3.04 V VBOR3- Falling (1) 2.85 2.93 3.01 VBOR3, STBY STANDBY mode 2.82 2.92 3.02 VHYS,BOR Brown-out reset hysteresis Level 0 15 21 mV Levels 1-3 34 40 tPD:BOR BOR propagation delay RUN/SLEEP/STOP mode 10 µs STANDBY mode 100 (1) Device operating in RUN, SLEEP, or STOP mode. 7.7.3 VBat Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VBAT Power supply range 1.62 3.6 V dVBAT/dt VBAT (supply voltage) slew rate Rising 0.1 V/µs Falling,standby (2) 0.1 V/ms VPOR+ (VBAT) Power-on reset voltage level Rising (1) 0.95 1.3 1.59 V VPOR- (VBAT) Falling (1) 0.9 1.25 1.54 VHYS, POR(VBAT) POR hysteresis 30 58 74 mV VBOR0+, COLD(VBAT ) Brown-out reset voltage level Cold start, rising (1) 1.5 1.56 1.62 V VBOR0+ (VBAT) Rising (1) (2) 1.55 1.59 1.62 VBOR0- (VBAT) Falling (1) (2) 1.53 1.56 1.61 VHYS, BOR(VBAT) BOR hysteresis 15 21 mV tPU(VBAT) Cold power up time 1.2 ms ICHARGE Charging peak current VDD=3.3, VBAT=0V 1.7 mA RSWITCH Internal switch resistance between VBAT and VDD 0.9 2.3 4.3 kΩ ITRIP Min current for internal comparator to detect reverse current from VBAT to VDD VDD sinking , 1.62<VBAT<3.3 100 µA (1) |dVDD/dt| ≤ 3V/s (2) Device operating in Standby Mode www.ti.com MSPM33C321A, MSPM33C3219 SLASFB6A – DECEMBER 2025 – REVISED SEPTEMBER 2026 Copyright © 2026 Texas Instruments Incorporated Submit Document Feedback 47 Product Folder Links: MSPM33C321A MSPM33C3219 |
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