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TMS570LS bảng dữ liệu(PDF) 79 Page - Texas Instruments

tên linh kiện TMS570LS
Giải thích chi tiết về linh kiện  Series 16/32-BIT RISC Flash Microcontroller
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TMS570LS bảng dữ liệu(HTML) 79 Page - Texas Instruments

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TMS570LS20206-EP, TMS570LS20216-EP
www.ti.com
SPNS209A – JUNE 2012 – REVISED AUGUST 2012
7.8
Flash Timings
Table 7-12. Timing Requirements For Program Flash
MIN
NOM
MAX
Unit
tprog(32-bit)
Full word (32-bit) programming time
33
300
µs
tprog(Total)
2M-byte programming
-40°C to 125°C
17
74
s
time(1)
0°C to 60°C, for first 25
17
25
s
cycles
tprog ECC(16-bit)
ECC programming time
33
300
µs
tprog ECC(total)
Total ECC bit
-40°C to 125°C
4.3
15
s
programming time (256k-
0°C to 60°C, for first 25
4.3
7
s
byte)
cycles
terase(sector)
Sector erase time
-40°C to 125°C
2
15
s
(including compaction)
0°C to 60°C, for first 25
1.5
10
s
cycles
terase(bank)
Bank erase time (including Bank 0
7.5
20
s
compaction),0°C to 60°C,
Bank 1
5.5
12
s
for first 25 cycles
Bank 2
5.5
12
s
Bank 3
5.5
12
s
twec
Write/erase cycles at TA = -40 to 125°C
(2)
1000
cycles
tret
Data Retention with continuous 150°C (2)
1000
hours
(1)
This programming time includes overhead of state machine, but does not include data transfer time.
(2)
Flash write/erase cycles and data retention specifications are based on a validated implementation of the TI flash API. Non-TI flash API
implementation is not supported. For detailed description see the F035 Flash Validation Procedure (SPNA127). The flash memory cells
are qualified for data retention greater than 1000 hours at 150°C. Data retention at reduced temperatures can be estimated based on an
Arrhenius model with activation energy of 1 eV.
Copyright © 2012, Texas Instruments Incorporated
Peripheral and Electrical Specifications
79
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Product Folder Link(s): TMS570LS20206-EP TMS570LS20216-EP



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