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SPC574K72E5 bảng dữ liệu(PDF) 77 Page - STMicroelectronics |
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SPC574K72E5 bảng dữ liệu(HTML) 77 Page - STMicroelectronics |
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77 / 127 page  DocID023601 Rev 5 77/127 SPC574Kxx Electrical characteristics 126 Table 40. Flash memory program and erase specifications (1) Symbol Characteristics(2) Value Unit Typ(3) C Initial max Typical end of life(4) Lifetime max(5) C 25 °C(6) All temp (7) C < 1 k cycles < 250 K cycles tdwprogram Double Word (64 bits) program time [Packaged part] 34 C 100 — — 55 500 C µs tpprogram Page (256 bits) program time 60 C 200 — — 108 1000 C µs tpprogrameep Page (256 bits) program time EEPROM (partition 2) [Packaged part] 69 C 220 — — 124 1000 C µs tqprogram Quad Page (1024 bits) program time 204 C 1040 1200 P 850 2000 C µs tqprogrameep Quad Page (1024 bits) program time EEPROM (partition 2) [Packaged part] 234 C 1140 1320 P 978 2000 C µs t16kpperase 16 KB block pre-program and erase time 150 C 1000 1000 P 330 5000 — C ms t32kpperase 32 KB block pre-program and erase time 200 C 1000 1000 P 440 5000 — C ms t64kpperase 64 KB block pre-program and erase time 300 C 1000 1000 P 660 5000 — C ms t256kpperase 256 KB block pre-program and erase time 900 C 2000 3000 P 1100 15000 — C ms t16kprogram 16 KB block program time 27 C 45 50 P 40 1000 — C ms t32kprogram 32 KB block program time 54 C 90 100 P 80 2000 — C ms t64kprogram 64 KB block program time 108 C 175 200 P 169 4000 — C ms t256kprogram 256 KB block program time 432 C 700 850 P 634 17000 — C ms t16kprogrameep Program 16 KB EEPROM (partition 2) [Packaged part] 31 C 52 58 P 64 1000 C ms t16keraseeep Erase 16 KB EEPROM (partition 2) [Packaged part] 160 C 1000 1000 P 500 5000 C ms ttr Program rate(8) 1.73 C 2.24 3.40 C 1.9 — C s/MB tpr Erase rate(8) 4.0 C 8.0 12.0 C 4.4 — C s/MB tffprogram Full flash programming time(9) 5 C 20 30 P 5.8 32 — C s tfferase Full flash erasing time(9) 13 C 26 30 P 14.2 40 — C s tESRT Erase suspend request rate(10) 5.5 T — — — — — — ms tPSRT Program suspend request rate(10) 20 T — — — — — — µs tPSUS Program suspend latency(11) —— — — — — 10 T µs |
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