| công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
MPC5744P bảng dữ liệu(PDF) 69 Page - Freescale Semiconductor, Inc |
|
|
|||||||||||||||||||||||||||||
MPC5744P bảng dữ liệu(HTML) 69 Page - Freescale Semiconductor, Inc |
|
69 / 114 page ![]() Electrical characteristics MPC5744P Data Sheet, Rev. 0.3 Preliminary—Subject to Change Without Notice Freescale Semiconductor 69 3.7 Voltage regulator electrical characteristics The voltage regulator is composed of the following blocks: • High power regulator (external NPN to support core current) • Low voltage detector (LVD_MAIN_1) for 3.3 V supply to IO (VDDIO) • Low voltage detector (LVD_MAIN_2) for 3.3 V supply (VDDREG) • Low voltage detector (LVD_MAIN_3) for 3.3 V flash supply (VDDFLASH) • Low voltage detector (LVD_MAIN_4) for 3.3 V ADC supply (VDDADC) • Low voltage detector (LVD_MAIN_5) for 3.3 V OSC supply (VDDOSC) • Low voltage detector (LVD_CORE) for 1.2 V digital core supply (HPVDD) • Low voltage detector (LVD_CORE_BK) for the self-test of LVD_CORE • High voltage detector (HVD_CORE) for 1.2 V digital core supply (HPVDD) • High voltage detector (HVD_CORE_BK) for the self-test of HVD_CORE. • Power on Reset (POR) The following bipolar transistors are supported: • BCP68 from ON Semiconductor • NJD2873 • NSS20501Uw3 Table 17. ESD ratings1, 2 NOTES: 1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. 2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification requirements. Complete DC parametric and functional testing shall be performed per applicable device specification at room temperature followed by hot temperature, unless specified otherwise in the device specification. No. Symbol Parameter Conditions Class Max value3 3 Data based on characterization results, not tested in production. Unit 1VESD(HBM) SR Electrostatic discharge (Human Body Model) TA =25°C conforming to AEC-Q100-002 H1C 2000 V 2VESD(MM) SR Electrostatic discharge (Machine Model) TA =25°C conforming to AEC-Q100-003 M2 200 V 3VESD(CDM) SR Electrostatic discharge (Charged Device Model) TA =25°C conforming to AEC-Q100-011 C3A 500 V 750 (corners) |
|
Link URL |
| Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Liên kết đến bảng dữ liệu | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |