MC9S08DZ96F2CLL datasheet(70/458 Pages) FREESCALE

70 / 458 page

Chapter 4 Memory

MC9S08DZ128 Series Data Sheet, Rev. 1

Freescale Semiconductor

a burst program command is issued, the charge pump is enabled and remains enabled after completion of

the burst program operation if these two conditions are met:

•

The next burst program command sequence has begun before the FCCF bit is set.

•

The next sequential address selects a byte on the same burst block as the current byte being

programmed. A burst block in this FLASH memory consists of 32 bytes. A new burst block begins

at each 32-byte address boundary.

The ﬁrst byte of a series of sequential bytes being programmed in burst mode will take the same amount

of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst

program time provided that the conditions above are met. If the next sequential address is the beginning of

a new row, the program time for that byte will be the standard time instead of the burst time. This is because

the high voltage to the array must be disabled and then enabled again. If a new burst command has not been

queued before the current command completes, then the charge pump will be disabled and high voltage

removed from the array.

A flowchart to execute the burst program operation is shown in Figure 4-12.

MC9S08DZ96F2CLL bảng dữ liệu(PDF) 70 Page - Freescale Semiconductor, Inc