MC9S08DZ96F2CLL datasheet(69/458 Pages) FREESCALE

69 / 458 page

Chapter 4 Memory

MC9S08DZ128 Series Data Sheet, Rev. 1

Freescale Semiconductor

A strictly monitored procedure must be obeyed or the command will not be accepted. This

minimizes the possibility of any unintended changes to the memory contents. The command

complete ﬂag (FCCF) indicates when a command is complete. The command sequence must be

completed by clearing FCBEF to launch the command. Figure 4-11 is a ﬂowchart for executing all

of the commands except for burst programming and sector erase abort.

4. Wait until the FCCF bit in FSTAT is set. As soon as FCCF= 1, the operation has completed

successfully.

Figure 4-11. Program and Erase Flowchart

4.6.4

Burst Program Execution

The burst program command is used to program sequential bytes of data in less time than would be

required using the standard program command. This is possible because the high voltage to the FLASH

array does not need to be disabled between program operations. Ordinarily, when a program or erase

command is issued, an internal charge pump associated with the FLASH memory must be enabled to

supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When

START

WRITE COMMAND TO FCMD

YES

FPVIOL OR

WRITE 1 TO FCBEF

TO LAUNCH COMMAND

AND CLEAR FCBEF (2)

FCCF?

ERROR EXIT

DONE

(2) Wait at least four bus cycles

before checking FCBEF or FCCF.

FACCERR?

CLEAR ERROR

FACCERR?

WRITE TO FCDIV(1)

(1) Required only once

after reset.

PROGRAM AND

ERASE FLOW

WRITE TO FLASH OR EEPROM TO

BUFFER ADDRESS AND DATA

MC9S08DZ96F2CLL bảng dữ liệu(PDF) 69 Page - Freescale Semiconductor, Inc