AT90SCR100 datasheet(28/433 Pages) ATMEL

28 / 433 page

TPR0327AY–SMS–30Jan09

AT90SCR100

The next code examples show assembly and C functions for reading the EEPROM. The exam-

ples assume that interrupts are controlled so that no interrupts will occur during execution of

these functions.

6.3.6

Preventing EEPROM Corruption

During periods of low VCC, the EEPROM data can be corrupted because the supply voltage is

too low for the CPU and the EEPROM to operate properly. These issues are the same as for

board level systems using EEPROM, and the same design solutions should be applied.

An EEPROM data corruption can be caused by two situations when the voltage is too low.

1. A regular write sequence to the EEPROM requires a minimum voltage to operate

correctly.

2. The CPU itself can execute instructions incorrectly, if the supply voltage is too low.

EEPROM data corruption can easily be avoided by following this design recommendation:

Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This

can be done by enabling the internal Brown-out Detector (BOD). If the detection level of the

internal BOD does not match the needed detection level, an external low VCC reset Protec-

tion circuit can be used. If a reset occurs while a write operation is in progress, the write

operation will be completed assuming that the power supply voltage is sufficient.

Assembly Code Example

EEPROM_read:

; Wait for completion of previous write

sbic

EECR,EEPE

rjmp

EEPROM_read

; Set up address (r18:r17) in address register

out

EEARH, r18

out

EEARL, r17

; Start eeprom read by writing EERE

sbi

EECR,EERE

; Read data from Data Register

r16,EEDR

ret

C Code Example

unsigned char

EEPROM_read(unsigned int uiAddress)

{

/* Wait for completion of previous write */

while(EECR & (1<<EEPE))

;

/* Set up address register */

EEAR = uiAddress;

/* Start eeprom read by writing EERE */

EECR |= (1<<EERE);

/* Return data from Data Register */

return EEDR;

}

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