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6402 bảng dữ liệu(PDF) 50 Page - Intel Corporation |
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6402 bảng dữ liệu(HTML) 50 Page - Intel Corporation |
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50 / 250 page ![]() Electrical, Power, and Thermal 50 Intel® 6400/6402 Advanced Memory Buffer Datasheet 4.4.11 Advance Memory Buffer Component Electrical Timing Summary Table 4-8 and Table 4-9 contain the electrical timing specifications for the Advance Memory Buffer component DDR2 interface. Table 4-8. Advance Memory Buffer Component DDR2 Electrical Timing Specifications Symbol Parameter DDR2 667 DDR2 533 Unit s Fig # Min Max Min Max System Memory Clock Timings tCK Ideal clock (CK) period 3.0 3.75 ns tCH CK high time 1.35 1.70 ns tCL CK low time 1.35 1.70 ns tjit CK cycle to cycle Jitter 150 175 ps 4-7 tjitHP CK half-cycle jitter 150 175 ps 4-7 TDQSCK Clock rising edge to DQS rising edge, or clock falling edge to DQS falling edge -- includes -110/-70 ps for package -200 20 -210 30 ps 4-10 System Memory Address/Command/Control Signal Timings (Normal) tCVB CMD/ADD/CNTL output valid before CLK/CLK 1260 1615 ps 4-8 tCVA CMD/ADD/CNTL output valid after CLK/CLK -- includes -140 ps for package 1120 1475 ps 4-8 System Memory Address/Command/Control Signal Timings (Early) tECVB Early CMD/ADD/CNTL output valid before CLK/CLK 1760 2240 4-9 tECVA Early CMD/ADD/CNTL output valid after CLK/CLK -- includes -140 ps for package 620 850 4-9 System Memory Data and Strobe Signal Timings tDVB DQ[63:0], CB[7:0], valid before DQS[15:0]/ DQS[15:0] crossing 575 750 ps 4-6 tDVA DQ[63:0], CB[7:0], valid after DQS[15:0]/DQS[15:0] crossing 575 750 ps 4-6 tDOPW DQ[63:0]. CB[7:0] Output Valid Pulse Width 1.35 1.70 ns tSUAMB DQ and CB Input Setup Time to DQS Crossing -530 -700 ps 4-11 tHDAMB DQ and CB Input Hold Time After DQS Crossing 970 1180 ps 4-11 tWPREAMB DQS Write Preamble Duration 2.85 3.5 3.58 4.25 ns 4-12 tWPSTAMB DQS Write Postamble Duration 1.35 1.65 1.7 2.05 ns 4-13 |
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