6402 datasheet(45/250 Pages) INTEL

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Intel® 6400/6402 Advanced Memory Buffer Datasheet

Electrical, Power, and Thermal

4.3

DDR2 DRAM Interface Electrical Specifications

Table 4-7 contains the electrical DC parameters for the AMB DDR2

Notes:

Values highlighted in ‘Red’ are for reference (that is, placeholder value)

No VREF pin on AMB

VOUT (slew) covers all other outputs slew rate including clock

Input voltage for all pins is limited to a maximum of 2.3 V.

VDD/2 = 1.7/2 = 850 mV; VOUT = 575 mV. (VOUT - VDD/2)/IOH must be less than 20 Ohm for values of

VOUT between VDD/2 and VDD/2 - 275 mV.

VDD/2 = 1.7/2 = 850 mV; VOUT = 275 mV. VOUT/IOH must be less than 20 Ohm for values of VOUT

between 0V and 275 mV.

CIO is the Input/Output capacitance for DQ/DQS, and Output capacitance for CMD/ADDR/CK.

Table 4-7.

Recommended Operating Conditions for DRAM Interface

Symbol

Parameter

Min

Nom

Max

Unit

VDD

Supply voltage

1.7

1.8

1.9

VREF

Input reference voltage

0.49 * VDD

0.50 * VDD

0.51 * VDD

VTT

Termination voltage

VREF – 40

VREF

VREF + 40

Single Ended Signals

VIN

Input voltage

VDD

VIH(dc)

DC HIGH-level input voltage

VDD / 2 + 100

VDD + 300

VIL(dc)

DC LOW-level input voltage

-300

VDD / 2 - 100

VIH(ac)

AC HIGH-level input voltage

VDD / 2 + 200

VIL(ac)

AC LOW-level input voltage

VDD / 2 – 200

VOH

Minimum Required Output Pull-up

under AC Test Load

VDD / 2 + 575

VOL

Maximum Required Output Pull-down

under AC Test Load

VDD / 2 - 575

VOTR

Output Timing Measurement

Reference Level

0.5*VDD

-V

IOH(dc)

Output minimum source dc current

-13.8

IOL(dc)

Output minimum sink dc current

13.8

Differential Signals

VID(dc)

DC differential input voltage

0.2

VID(ac)

AC differential input voltage

0.4

VIX(ac)

AC differential input crossing voltage

0.5 * VDD -

0.100

-0.5 * VDD +

0.100

Input timing measurement reference

level

VIX(ac)

VOX(ac)

AC differential output crossing

voltage

0.5 * VDD -

0.100

-0.5 * VDD +

0.100

VOUT (slew)

Output slew-rate requirement

2.2

3.2

V/ns

Iih

Input leakage current (HIGH)

µA

Iil

Input leakage current (LOW)

µA

CIO

Input/Output Capacitance

2.0

2.5

ROUT

Output Impedance

Ohms

Package surface (case) temperature

for AMB

110

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