6402 datasheet(43/250 Pages) INTEL

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Intel® 6400/6402 Advanced Memory Buffer Datasheet

Electrical, Power, and Thermal

Notes:

Vdd : Thermal Design = 1.845 V (+2.5%) ; Max Current = 1.900 V (+5.5%)

Vcc : Thermal Design = 1.530 V (+2%) ; Max Current = 1.575 V (+5%)

Includes all DIMM DRAM organizations (SRx4, DRx4, SRx8, DRx8) and Raw Cards (A, B, C, D, E, H, J)

For x8, measured with DRx8 raw card B with 39 ohm termination for command, address, and clocks, and

47 ohm termination for CS and CKE

For x4, measured with DRx4 raw card E with parallel 33 ohm termination for command, address, and 39

ohm termination for CS, CKE and clocks

Cards using smaller termination resistors will have higher powers. for example, x4 cards parallel 22 ohm

termination for command and address could add as much as 0.4W to the power for all states.

Total DIMM current during S3 includes AMB IDD_S3 and self-refresh current of all DRAM devices.

Idd_EI

(for AMB

spec, Not in

SPD)

Electrical Idle

DRAM Idle (0 BW)

Primary channel Disabled

Secondary channel Disabled

CKE low. Command and

Address lines Floated

DRAM clock active, ODT and

CKE driven low

@1.5 V

2.0

2.5

@1.8 V

0.2

@3.3 V

Idd_EI Total Power

IDD_S3

S3 Current

VDD = 1.9V

VCC = 0V

VTT = 0V

Across process variations

Across the operating TCASE

temp range

DIMM types, R/C A, B, C, D, E,

H & J

VDD

(1.8V)

Table 4-4.

Power Values for x4 DIMMs (Sheet 3 of 3)

533 MHz

667 MHz

Symbol

Conditions

Power

Supply

Thermal

Design

Max

Current

Thermal

Design

Max

Current

Units

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