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9.4 Flash memory AC timing specifications

Table 35. Flash memory AC timing specifications

Symbol

Characteristic

Min

Typical

Max

Units

tdone

Time from 0 to 1 transition on the MCR[EHV] bit

initiating a program/erase until the MCR[DONE]

bit is cleared.

—

tdones

Time from 1 to 0 transition on the MCR[EHV] bit

aborting a program/erase until the MCR[DONE]

bit is set to a 1.

5 plus four

system clock

periods

—

22 plus four

system clock

periods[1]

µs

tdrcv

Time to recover once exiting low power mode.

14 plus seven

system clock

periods[2]

17.5 plus

seven system

clock periods

21 plus seven

system clock

periods

µs

taistart

Time from 0 to 1 transition of UT0[AIE] initiating a

Margin Read or Array Integrity until the UT0[AID]

bit is cleared. This time also applies to the

resuming from a suspend or breakpoint by

clearing UT0[AISUS] or clearing UT0[NAIBP]

—

taistop

Time from 1 to 0 transition of UT0[AIE] initiating

an Array Integrity abort until the UT0[AID] bit is

set. This time also applies to the UT0[AISUS] to

UT0[AID] setting in the event of a Array Integrity

suspend request.

—

system clock

periods

tmrstop

Time from 1 to 0 transition of UT0[AIE] initiating

a Margin Read abort until the UT0[AID] bit is

set. This time also applies to the UT0[AISUS] to

UT0[AID] setting in the event of a Margin Read

suspend request.

—

plus fifteen

system clock

periods

µs

[1] For Block Erase, Tdones times may be 3x max spec.

[2] In extreme cases (1 block configurations) Tdrcv min may be faster (12uS plus seven system clocks)

9.5 Flash memory read timing parameters

Table 36. Flash Read Wait State Settings (S32K344, S32K324, S32K314, S32K342, S32K322, S32K341, S32K312,

S32K311, S2K310 and S32K389(PFC1))

Flash Frequency (CORE_CLK)

RWSC setting

250 KHz < Freq ≤ 66 MHz

66 MHz < Freq ≤ 100 MHz

100 MHz < Freq ≤ 133 MHz

133 MHz < Freq ≤ 167 MHz

167 MHz < Freq ≤ 200 MHz

Table continues on the next page...

NXP Semiconductors

S32K3XX

S32K3xx Data Sheet

S32K3XX

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Product data sheet

Rev. 13 — 12 November 2025

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