S32K310 datasheet(57/164 Pages) NXP

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Table 17. RUN mode supply currents (peripherals disabled) for S32K389, S32K3x8, S32K34x, S32K32x and

S32K314...continued

125,

max [11], [12]

146.7

164.7

178

171.3

188.7

235.6

0.8

4.2

[1] Current numbers are for reduced configuration and may vary based on user configuration and silicon process variation.

[2] See the configurations in Table 23.

[3] RUN IDD @ V15 includes Flash memory read current from the V11 voltage rail.

[4] For S32K38x, the current from a V15 supply will flow through the external NMOS for the V11 regulation stage, and into the V11 pins of the device.

[5] IO load current is not included. The actual current requirements for IOs will depend on the I/O configuration in the application.

[6] RUN IDD @ VDD_HV_A includes Flash memory read current from the V25 voltage rail.

[7] “typ” is indicative of the average current numbers at the nominal internally regulated V11 supply voltage, VDD_HV_A = 5.0V, VDD_HV_B = 5.0V, V15 = 1.5V,

for the typical silicon process.

[8] "max" is indicative of the maximum current numbers at the maximum internally regulated V11 supply voltage (1.16 V), VDD_HV_A = 5.5V, VDD_HV_B = 5.5V,

V15= 1.65V, for the fast silicon process.

[9] For the maximum allowable RUN current in an application, the junction temperature must be kept below the maximum specification, TJ < 150°C, to avoid

self-heating.

[10] “typ” is indicative of the average current numbers at the nominal internally regulated V11 supply voltage, VDD_HV_A = 5.0V, VDD_HV_B = 5.0V, V15 = 1.5V,

for the typical silicon process.

[11] "max" is indicative of the maximum current numbers at the maximum internally regulated V11 supply voltage (1.16 V), VDD_HV_A = 5.5V, VDD_HV_B = 5.5V,

V15= 1.65V, for the fast silicon process.

[12] For the maximum allowable RUN current in an application, the junction temperature must be kept below the maximum specification, TJ < 150°C, to avoid

self-heating.

Typical current numbers are indicative for typical silicon process and may vary based on the silicon distribution and user

configuration. Typical conditions assumes VDD_HV_A = VREFH = 5 V, VDD_HV_B = 5V (if the VDD_HV_B domain present in the

device), temperature = 25 °C and typical silicon process unless otherwise stated.

Table 18. RUN mode supply currents (peripherals disabled) for S32K312, S32K311 and S32K310

Chip

Ambient

Temperature (°C)

RUN Mode (mA) [1]

Min. Config. [2]

Single Core @80 MHz

[Clock Option F]

Min. Config. [2]

Single Core @120 MHz

[Clock Option B]

S32K312

25, typ [6]

25, max [7]

85, typ [6]

85, max [7]

58.5

59.7

105, typ [6]

48.1

48.7

105, max [7]

76.4

77.8

125, typ [6]

56.5

Table continues on the next page...

NXP Semiconductors

S32K3XX

S32K3xx Data Sheet

S32K3XX

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Product data sheet

Rev. 13 — 12 November 2025

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