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S32K310 bảng dữ liệu(PDF) 48 Page - NXP Semiconductors

tên linh kiện S32K310
Giải thích chi tiết về linh kiện  Supports S32K344, S32K324, S32K314, S32K312, S32K311, S32K310, S32K341, S32K342, S32K322, S32K328, S32K338, S32K348, S32K356, S32K358, S32K388 and S32K389. Data is preliminary for S32K312 and S32K344 100LQFP only.
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COUT_V15_NPN
Q_V15_NPN
RBTC15
V15
BJT option
External NPN
Ballast transistor
VDD_HV_NPN
V15
PTE13 | VRC_CTRL
2.2k
2.2uF
High-current
Logic supply (1.5V)
Figure 33. Ballast circuit
6.6 V11 regulator (NMOS ballast transistor control) electrical specifications
The chip hardware design guidelines document lists the recommended part number for NMOS. The S32K388 and S32K389
supports a linear regulator stage for the V11 supply, with a dedicated pin to control an external NMOS transistor.
Table 14. V11 regulator (NMOS ballast transistor control) electrical specifications
Symbol
Description
Min
Typ
Max
Unit
Condition
Spec
Number
V15
V15 input
—
1.5
—
V
—
—
V11
V11 output
—
1.14
—
V
—
—
VTH_NMOS
Vth of external
NMOS
—
—
1.5
V
For 3.3 V supply
—
VTH_NMOS
Vth of external
NMOS
—
—
2
V
For 5.0 V supply
—
IDS_NMOS
IDS of external
NMOS
3
—
—
A
—
—
tsettle_lm
Required setting
time from V11 in
FPM to load change
10
—
—
us
—
—
CNMOS
NMOS gate stability
capacitor
—
1
—
nF
—
—
ILKG_NMOS
Allowable drain to
source leakage thru
the external NMOS
transistor
—
—
2
mA
—
—
6.7 Supply currents
Typical current numbers are indicative for typical silicon process and may vary based on the silicon distribution and user
configuration. Typical conditions assumes VDD_HV_A = VREFH = 5 V, VDD_HV_B = 5V (if the VDD_HV_B domain present in the
NXP Semiconductors
S32K3XX
S32K3xx Data Sheet
S32K3XX
All information provided in this document is subject to legal disclaimers.
© 2025 NXP B.V. All rights reserved.
Product data sheet
Rev. 13 — 12 November 2025
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