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156 / 216 page ![]() 154 S75WS256Nxx Based MCPs S75WS-N-00_A0 February 17, 2005 Ad van c e Inf o rmation not be transferred to the RAM array and the internal value will remain unchanged. During an asyn- chronous Write cycle, the data to be written is latched on the rising edge of CE#, WE#, LB#, or UB#, whichever occurs first. When both the LB# and UB# are disabled (High) during an operation, the device will disable the data bus from receiving or transmitting data. Although the device will seem to be deselected, it remains in an active mode as long as CE# remains Low. Note: Non-default BCR settings: Latency code two (three clocks); Wait active Low; Wait asserted during delay. Figure 29.7 Refresh Collision During Read Operation Additional WAIT states inserted to allow refresh completion. CLK A[22:0] ADV# CE# OE# WE# WAIT DQ[15:0] LB#/UB# Don't care Undefined Legend: VIH VIL VIH VIL VIH VIL VIH VIL VIH VIL VIH VIL VIH VIL High-Z VOH VOL D[0] D[1] D[2] D[3] VOH VOL Address Valid |
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