S75WS256NDFBAWMB datasheet(14/216 Pages) SPANSION

14 / 216 page

S75WS256Nxx Based MCPs

S75WS-N-00_A0 February 17, 2005

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Inf o rmation

Ordering Information

The ordering part number is formed by a valid combination of the following:

Package Marking Note:

The BGA package marking omits the leading S75 and packing type designator from the ordering part number.

Valid Combinations

Valid Combinations list configurations planned to be supported in volume for this device. Consult

your local sales office to confirm availability of specific valid combinations and to check on newly

released combinations.

S75WS 256 N D F BA W M A

RAM Supplier; Speed Combination

= Cellular RAM2, 54 MHz

= Cellular RAM2, 66 MHz

Package Dimensions and Ball Count; DYB Power Up;

Flash Device Family (Data Storage)

= 1.4 mm, 9 x 12, 84 ball; 0; RS

= 1.4 mm, 9 x 12, 84 ball; 1; RS

Temperature Range

= Wireless (–25°C to +85°C)

Package Type And Material

= Very Thin Fine-Pitch Ball Grid Array (BGA),

Lead (Pb)-free Compliant Package

= Very Thin Fine-Pitch Ball Grid Array (BGA),

Lead (Pb)-free Package

Data Storage Density

= 512 Mb

Code Flash Density

= 128 Mb

Process Technology

= 110 nm, Mirror Bit Technology

Flash Density

256

= 256 Mb

Device Family

S75WS = Multi-chip Product (MCP)

1.8-volt Burst Mode Flash Memory, RAM, and NAND Data Storage

Table 2.1 MCP Configurations and Valid Combinations

Valid Combinations

S75WS256N

BA, BF

M, P

A, B

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