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TMS470MF06607 bảng dữ liệu(PDF) 46 Page - Texas Instruments |
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TMS470MF06607 bảng dữ liệu(HTML) 46 Page - Texas Instruments |
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46 / 65 page ![]() TMS470MF06607 SPNS157C – JANUARY 2012 www.ti.com 5.2.8 Flash Timings Table 5-15. Timing Requirements for Program Flash PARAMETER TEST CONDITIONS MIN NOM MAX UNIT Flash pump stabilization time From Sleep Mode to 20 Standby Mode From Standby Mode to 1 Active Mode tacc_delay µs Flash bank stabilization time From Sleep Mode to 1.9 Standby Mode From Standby Mode to 0.1 Active Mode tprog(16-bit) Half-word (16-bit) programming time 37.5 300 µs 512k-byte programming time(1) 10 78.7 tprog(Total) s 640-k-byte programming time(1) 12.5 98.4 terase(sector) Sector erase time 1.5 15 s Write/erase cycles at TA = -40 to125 °C with 1000(2) cycles 15-year Data Retention requirement Nwec Write/erase cycles at TA = -40 to 125 °C EEPROM emulation requirement for 16k 25000(2)(3) cycles flash sectors in Bank 1 (1) tprog(Total) programming time includes overhead of state machine, but does not include data transfer time. (2) Flash write/erase cycles and data retention specifications are based on a validated implementation of the TI flash API. Non-TI flash API implementation is not supported. For detailed description see the F035 Flash Validation Procedure (SPNA127). (3) Flash write/erase cycle and data retention specifications are based on an assumed distribution of write/erase cycles over the life of the product including and even distribution over the rated temperature range and time between cycles. The EEPROM emulation bank has been qualified as outlined in the JEDEC specification JESD22-A117C. 46 Peripheral Information and Electrical Specifications Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Link(s): TMS470MF06607 |
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