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TMS470MF06607 bảng dữ liệu(PDF) 46 Page - Texas Instruments

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TMS470MF06607
SPNS157C
– JANUARY 2012
www.ti.com
5.2.8
Flash Timings
Table 5-15. Timing Requirements for Program Flash
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
Flash pump stabilization time
From Sleep Mode to
20
Standby Mode
From Standby Mode to
1
Active Mode
tacc_delay
µs
Flash bank stabilization time
From Sleep Mode to
1.9
Standby Mode
From Standby Mode to
0.1
Active Mode
tprog(16-bit)
Half-word (16-bit) programming time
37.5
300
µs
512k-byte programming time(1)
10
78.7
tprog(Total)
s
640-k-byte programming time(1)
12.5
98.4
terase(sector)
Sector erase time
1.5
15
s
Write/erase cycles at TA = -40 to125
°C with
1000(2)
cycles
15-year Data Retention requirement
Nwec
Write/erase cycles at TA = -40 to 125
°C
EEPROM emulation requirement for 16k
25000(2)(3)
cycles
flash sectors in Bank 1
(1)
tprog(Total) programming time includes overhead of state machine, but does not include data transfer time.
(2)
Flash write/erase cycles and data retention specifications are based on a validated implementation of the TI flash API. Non-TI flash API
implementation is not supported. For detailed description see the F035 Flash Validation Procedure (SPNA127).
(3)
Flash write/erase cycle and data retention specifications are based on an assumed distribution of write/erase cycles over the life of the
product including and even distribution over the rated temperature range and time between cycles. The EEPROM emulation bank has
been qualified as outlined in the JEDEC specification JESD22-A117C.
46
Peripheral Information and Electrical Specifications
Copyright
© 2012, Texas Instruments Incorporated
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