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CYT4DNJBJS bảng dữ liệu(PDF) 145 Page - Infineon Technologies AG

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Giải thích chi tiết về linh kiện  TRAVEO™ T2G 32-bit Automotive MCU Based on Arm® Cortex®-M7 dual
PDF  209 Pages
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nhà sản xuất  INFINEON [Infineon Technologies AG]
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Datasheet
145
002-24601 Rev. *I
2023-02-14
TRAVEO™ T2G 32-bit Automotive MCU
Based on Arm® Cortex®-M7 dual
Electrical specifications
SID559
VTR_4P1_R
LVD 4.1 V trimmed rising trip point for
VDDD
Typ – 4% 4125 Typ + 4%
mV
Same as VTR_4P1_F+
25 mV
SID560
VTR_4P2_R
LVD 4.2 V trimmed rising trip point for
VDDD
Typ – 4% 4225 Typ + 4%
mV
Same as VTR_4P2_F+
25 mV
SID561
VTR_4P3_R
LVD 4.3 V trimmed rising trip point for
VDDD
Typ – 4% 4325 Typ + 4%
mV
Same as VTR_4P3_F+
25 mV
SID562
VTR_4P4_R
LVD 4.4 V trimmed rising trip point for
VDDD
Typ – 4% 4425 Typ + 4%
mV
Same as VTR_4P4_F+
25 mV
SID563
VTR_4P5_R
LVD 4.5 V trimmed rising trip point for
VDDD
Typ – 4% 4525 Typ + 4%
mV
Same as VTR_4P5_F+
25 mV
SID564
VTR_4P6_R
LVD 4.6 V trimmed rising trip point for
VDDD
Typ – 4% 4625 Typ + 4%
mV
Same as VTR_4P6_F+
25 mV
SID565
VTR_4P7_R
LVD 4.7 V trimmed rising trip point for
VDDD
Typ – 4% 4725 Typ + 4%
mV
Same as VTR_4P7_F+
25 mV
SID566
VTR_4P8_R
LVD 4.8 V trimmed rising trip point for
VDDD
Typ – 4% 4825 Typ + 4%
mV
Same as VTR_4P8_F+
25 mV
SID567
VTR_4P9_R
LVD 4.9 V trimmed rising trip point for
VDDD
Typ – 4% 4925 Typ + 4%
mV
Same as VTR_4P9_F+
25 mV
SID568
VTR_5P0_R
LVD 5.0 V trimmed rising trip point for
VDDD
Typ – 4% 5025 Typ + 4%
mV
Same as VTR_5P0_F+
25 mV
SID569
VTR_5P1_R
LVD 5.1 V trimmed rising trip point for
VDDD
Typ – 4% 5125 Typ + 4%
mV
Same as VTR_5P1_F+
25 mV
SID570
VTR_5P2_R
LVD 5.2 V trimmed rising trip point for
VDDD
Typ – 4% 5225 Typ + 4%
mV
Same as VTR_5P2_F+
25 mV
SID571
VTR_5P3_R
LVD 5.3 V trimmed rising trip point for
VDDD
Typ – 4% 5325 Typ + 4%
mV
Same as VTR_5P3_F+
25 mV
SID573
LVD_RR_A
Power ramp rate: VDDD (Active)
–
–
100
mV/µs
SID574
LVD_RR_DS
Power ramp rate: VDDD (DeepSleep)
–
–
10
mV/µs
SID575
tDLY_ACT_LVD
Active mode delay between VDDD
falling/rising through LVD
rising/falling point and an internal
LVD output transitioning through
VDDD / 2
––
1µs
Guaranteed by
design
SID575A tDLY_DS_LVD
DeepSleepmodedelaybetweenVDDD
falling/rising through LVD
rising/falling point and an internal
LVD output transitioning through
VDDD / 2
––
4µs
Guaranteed by
design
SID576
tRES_LVD
Response time of LVD, VDDD supply.
LVD guaranteed to generate pulse for
VDDD pulse width greater than this.
(For falling-then-rising supply at max
ramp rate; pulse width is time below
LVD falling trip point.)
100
–
–
ns
Guaranteed by
design
High-voltage OVD specifications
SID580
VTR_5P0_R
High-voltage OVD 5.0-V trimmed
rising trip point for VDDD and VDDA_ADC
5.049
5.205
5.361
V
SID581
VTR_5P0_F
High-voltage OVD 5.0-V trimmed
falling trip point for VDDD and
VDDA_ADC
5.025
5.18
5.335
V
SID582
VTR_5P5_R
High-voltage OVD 5.5-V trimmed
rising trip point for VDDDandVDDA_ADC
(default)
5.548
5.72
5.892
V
Table 26-15
System resources (continued)
Spec ID
Parameter
Description
Min
Typ
Max
Units
Details/
conditions



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