CYT4DNJBJS datasheet(117/209 Pages) INFINEON

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Datasheet

117

002-24601 Rev. *I

2023-02-14

TRAVEO™ T2G 32-bit Automotive MCU

Based on Arm® Cortex®-M7 dual

Electrical specifications

SID674B VHYST_CMOS Hysteresis in CMOS

mode

0.05 ×

VDDIO_HSIO

––

CFG_IN_AU-

TOLVL/VTRIP_SEL<0:0>= 0b0

CFG_IN/VTRIP_SEL<0:0> = 0b0

SID675B CIN

Input pin

capacitance

––

pF Test condition: 10/100MHz

SID676D IIL12

Input leakage current

–1

–

µA VDDIO_HSIO = 3.6 V,

VSS < VI < VDDIO_HSIO

–40 °C  TA  105 °C

HSIO_STDLN specifications (3 V I/Os)

SID650E VOL0

Output LOW voltage

level

––

0.4

IOL = 10 mA

CFG_DRIVE_EXT<1:0>/DRIVE_SEL

_EXT<2:0> = 0b000

SID651F VOL0

Output LOW voltage

level

––

0.2

IOL = 0.1 mA

CFG_DRIVE_EXT<1:0>/DRIVE_SEL

_EXT<2:0> = 0b000

SID654I VOL1

Output LOW voltage

level

––

0.4

IOL = 10 mA

CFG_DRIVE_EXT<1:0>/DRIVE_SEL

_EXT<2:0> = 0b001

3.0 V  VDDIO_HSIO  3.6 V

SID655G VOL2

Output LOW voltage

level

––

0.4

IOL = 2 mA

CFG_DRIVE_EXT<1:0>/DRIVE_SEL

_EXT<2:0> = 0b010

3.0 V  VDDIO_HSIO  3.6 V

SID656G VOL3

Output LOW voltage

level

––

0.4

IOL = 1 mA

CFG_DRIVE_EXT<1:0>/DRIVE_SEL

_EXT<2:0> = 0b011

3.0 V  VDDIO_HSIO 3.6 V

SID656H VOL4

Output LOW voltage

level

––

0.4

IOL = 0.5 mA

CFG_DRIVE_EXT<1:0>/DRIVE_SEL

_EXT<2:0> = 0b100

3.0 V  VDDIO_HSIO 3.6 V

SID657J VOH0

Output HIGH voltage

level

VDDIO_HSIO–

0.4

––

IOH = –10 mA

CFG_DRIVE_EXT<1:0>/DRIVE_SEL

_EXT<2:0> = 0b000

SID658D VOH0

Output HIGH voltage

level

VDDIO_HSIO–

0.2

––

IOH = –0.1 mA

CFG_DRIVE_EXT<1:0>/DRIVE_SEL

_EXT<2:0> = 0b000

SID661F VOH1

Output HIGH voltage

level

VDDIO_HSIO–

0.4

––

IOH = –10 mA

CFG_DRIVE_EXT<1:0>/DRIVE_SEL

_EXT<2:0> = 0b001

3.0 V  VDDIO_HSIO  3.6 V

SID662F VOH2

Output HIGH voltage

level

VDDIO_HSIO–

0.4

––

IOH = –2 mA

CFG_DRIVE_EXT<1:0>/DRIVE_SEL

_EXT<2:0> = 0b010

3.0 V  VDDIO_HSIO  3.6 V

SID663E VOH3

Output HIGH voltage

level

VDDIO_HSIO–

0.4

––

IOH = –1 mA

CFG_DRIVE_EXT<1:0>/DRIVE_SEL

_EXT<2:0> = 0b011

3.0 V  VDDIO_HSIO  3.6 V

SID663F VOH4

Output HIGH voltage

level

VDDIO_HSIO–

0.4

––

IOH = –0.5 mA

CFG_DRIVE_EXT<1:0>/DRIVE_SEL

_EXT<2:0> = 0b100

3.0 V  VDDIO_HSIO  3.6 V

SID664D RPD

Pull-down resistance

100

kΩ

SID665F RPU

Pull-up resistance

100

kΩ

SID665H VIH3

Input Voltage HIGH

threshold

1.7

–

CFG_IN_AU-

TOLVL/VTRIP_SEL<0:0>= 0b1

CFG_IN/VTRIP_SEL<0:0> = 0b1

SID667G VIH0

Input Voltage HIGH

threshold

0.7 ×

VDDIO_HSIO

––

CFG_IN_AU-

TOLVL/VTRIP_SEL<0:0>= 0b0

CFG_IN/VTRIP_SEL<0:0> = 0b0

Table 26-5

I/O specifications (continued)

Spec ID Parameter

Description

Min

Typ

Max

Units

Details/conditions

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