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MCIMX503CVM8B bảng dữ liệu(PDF) 70 Page - NXP Semiconductors

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i.MX50 Applications Processors for Consumer Products, Rev. 7
Electrical Characteristics
Freescale Semiconductor
70
4.8.2
DRAM Command and Address Output Timing—LPDDR2
The following diagrams and tables specify the timings related to the address and command pins, which
interface LPDDR2 memory devices.
Table 46. EMI Command/Address AC Timing
ID
Description
Symbol
Min
Max
Unit
DDR1
CK cycle time
tCK
3.75
—
ns
DDR2
CK high level width
tCH
0.48 tCK
0.52 tCK
ns
DDR3
CK low level width
tCL
0.48 tCK
0.52 tCK
ns
DDR4
Control output setup time
tIS
0.5 tCK
- 0.3
—ns
DDR5
Control output hold time
tIH
0.5 tCK
- 0.3
—ns
DDR6
CK >= 200 MHz
Address output setup time
tIS
0.5 tCK
- 1.3
—ns
DDR7
CK >= 200 MHz
Address output hold time
tIH
0.5 tCK
- 1.3
—ns
DDR6
CK < 200 MHz
Address output setup time
tIS
1
—
ns
DDR7
CK < 200 MHz
Address output hold time
tIH
1
—
ns
Figure 29. DRAM Command/Address Output Timing—LPDDR2
DRAM_SDCLK
DRAM_SDCLK_B
DRAM_CS0
DRAM_A[9:0]
DDR1
DDR2
DDR3
DDR4
DDR5
rise
fall
DDR6
DDR7



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