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STM32F101X8 bảng dữ liệu(PDF) 49 Page - STMicroelectronics

tên linh kiện STM32F101X8
Giải thích chi tiết về linh kiện  Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces
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STM32F101X8 bảng dữ liệu(HTML) 49 Page - STMicroelectronics

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STM32F101x8, STM32F101xB
Electrical characteristics
Doc ID 13586 Rev 13
49/85
All timings are derived from tests performed under the ambient temperature and VDD supply
voltage conditions summarized in Table 8.
5.3.8
PLL characteristics
The parameters given in Table 26 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 85 °C unless otherwise specified.
Table 25.
Low-power mode wakeup timings
Symbol
Parameter
Typ
Unit
tWUSLEEP
(1)
1.
The wakeup times are measured from the wakeup event to the point at which the user application code
reads the first instruction.
Wakeup from Sleep mode
1.8
µs
tWUSTOP
(1)
Wakeup from Stop mode (regulator in run mode)
3.6
µs
Wakeup from Stop mode (regulator in low-power mode)
5.4
tWUSTDBY
(1)
Wakeup from Standby mode
50
µs
Table 26.
PLL characteristics
Symbol
Parameter
Value
Unit
Min(1)
Typ
Max(1)
1.
Based on device characterization, not tested in production.
fPLL_IN
PLL input clock(2)
2.
Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
18.0
25
MHz
PLL input clock duty cycle
40
60
%
fPLL_OUT
PLL multiplier output clock
16
36
MHz
tLOCK
PLL lock time
200
µs
Jitter
Cycle-to-cycle jitter
300
ps
Table 27.
Flash memory characteristics
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit
tprog
16-bit programming time
TA–40 to +85 °C
40
52.5
70
µs
tERASE
Page (1 KB) erase time
TA –40 to +85 °C
20
40
ms
tME
Mass erase time
TA –40 to +85 °C
20
40
ms



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