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STM32F101X8 bảng dữ liệu(PDF) 52 Page - STMicroelectronics

tên linh kiện STM32F101X8
Giải thích chi tiết về linh kiện  Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces
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Electrical characteristics
STM32F101x8, STM32F101xB
52/85
Doc ID 13586 Rev 13
5.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78 IC latch-up standard.
5.3.12
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 33 are derived from tests
performed under the conditions summarized in Table 8. All I/Os are CMOS and TTL
compliant.
Table 31.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1.
Based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA +25 °C
conforming to JESD22-A114
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device model)
TA +25 °C
conforming to JESD22-C101
II
500
Table 32.
Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA +85 °C conforming to JESD78A
II level A



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