HCS08 datasheet(189/198 Pages) NXP

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Appendix A Electrical Characteristics

MC9S08QD4 Series MCU Data Sheet, Rev. 6

Freescale Semiconductor

189

A.10

Flash Specifications

This section provides details about program/erase times and program-erase endurance for the flash

memory.

Program and erase operations do not require any special power sources other than the normal VDD supply.

For more detailed information about program/erase operations, see the Memory section.

Zero-Scale Error

10 bit mode

EZS

±1.5

±3.1

LSB

VADIN = VSSA

8 bit mode

±0.5

±0.7

Full-Scale Error

10 bit mode

EFS

±1.0

±1.5

LSB

VADIN = VDDA

8 bit mode

±0.5

Quantization Error

10 bit mode

——

±0.5

LSB

8 bit mode is

not truncated

1 Typical values assume V

DDAD = 5.0 V, Temp = 25°C, fADCK=1.0 MHz unless otherwise stated. Typical values are for reference

only and are not tested in production.

2 At 4 MHz, for maximum frequency, use proportionally lower source impedance.

Table A-11. Flash Characteristics

Characteristic

Symbol

Min

Typical

Max

Unit

Supply voltage for program/erase

–40

°C to 125°CV

prog/erase

2.7

5.5

Supply voltage for read operation

VRead

2.7

5.5

Internal FCLK frequency1

The frequency of this clock is controlled by a software setting.

fFCLK

150

200

kHz

Internal FCLK period (1/FCLK)

tFcyc

56.67

μs

Byte program time (random location)(2)

tprog

9tFcyc

Byte program time (burst mode)(2)

tBurst

4tFcyc

Page erase time2

2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for

calculating approximate time to program and erase.

tPage

4000

tFcyc

Mass erase time(2)

tMass

20,000

tFcyc

Program/erase endurance3

TL to TH = –40°C to + 125°C

T = 25

°C

3 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how

Freescale defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.

10,000

—

100,000

—

cycles

Data retention4

4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated

to 25

°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer

to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.

tD_ret

100

—

years

Table A-10. ADC Characteristics (continued)

Characteristic

Conditions

Symb

Min

Typ1

Max

Unit

Comment

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