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HCS12 bảng dữ liệu(PDF) 98 Page - Freescale Semiconductor, Inc |
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HCS12 bảng dữ liệu(HTML) 98 Page - Freescale Semiconductor, Inc |
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98 / 452 page ![]() S12CPUV2 Reference Manual, Rev. 4.0 98 Freescale Semiconductor U — Unstack 16-bit data. These cycles are extended to two bus cycles if the MCU is operating with an 8-bit external data bus and the SP is pointing to external memory. There can be additional stretching when the address space is assigned to a chip-select circuit programmed for slow memory. These cycles are also stretched if they correspond to misaligned accesses to a memory that is not designed for single-cycle misaligned access. The internal RAM is designed to allow single-cycle misaligned word access. V — Vector fetch. Vectors are always aligned 16-bit words. These cycles are extended to two bus cycles if the MCU is operating with an 8-bit external data bus and the program is stored in external memory. There can be additional stretching when the address space is assigned to a chip-select circuit programmed for slow memory. t — 8-bit conditional read. These cycles are either data read cycles or unused cycles, depending on the data and flow of the REVW instruction. These cycles are stretched only when controlled by a chip-select circuit programmed for slow memory. T — 16-bit conditional read. These cycles are either data read cycles or free cycles, depending on the data and flow of the REV or REVW instruction. These cycles are extended to two bus cycles if the MCU is operating with an 8-bit external data bus and the corresponding data is stored in external memory. There can be additional stretching when the address space is assigned to a chip-select circuit programmed for slow memory. These cycles are also stretched if they correspond to misaligned accesses to a memory that is not designed for single-cycle misaligned access. x — 8-bit conditional write. These cycles are either data write cycles or free cycles, depending on the data and flow of the REV or REVW instruction. These cycles are only stretched when controlled by a chip-select circuit programmed for slow memory. |
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