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S7G2 bảng dữ liệu(PDF) 104 Page - Renesas Technology Corp |
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S7G2 bảng dữ liệu(HTML) 104 Page - Renesas Technology Corp |
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104 / 117 page ![]() R01DS0262EU0150 Rev.1.50 Page 104 of 117 Sep 24, 2025 S7G2 Datasheet 2. Electrical Characteristics 2.14.2 Data Flash Memory Characteristics Note 1. The reprogram/erase cycle is the number of erasures for each block. When the reprogram/erase cycle is n times (n = 125,000), erasing can be performed n times for each block. For example, when 4-byte programming is performed 16 times for different addresses in 64-byte blocks, and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address several times as one erasure is not enabled. (Overwriting is prohibited.) Note 2. This is the minimum number of times to guarantee all the characteristics after reprogramming. The guaranteed range is from 1 to the minimum value. Note 3. This indicates the characteristics when reprogramming is performed within the specified range, including the minimum value. Note 4. This result is obtained from reliability testing. Table 2.54 Data flash memory characteristics Conditions: Program or erase: FCLK = 4 to 60 MHz Read: FCLK ≤ 60 MHz Parameter Symbol FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 60 MHz Unit Min Typ Max Min Typ Max Programming time 4-byte tDP4 - 0.36 3.8 - 0.16 1.7 ms Erasure time 64-byte tDE64 - 3.1 18 - 1.7 10 ms Blank check time 4-byte tDBC4 - - 84 - - 30 μs Reprogramming/erasure cycle*1 NDPEC 125000*2 - - 125000*2 --- Suspend delay during programming tDSPD - - 264 - - 120 μs First suspend delay during erasure in suspend priority mode tDSESD1 - - 216 - - 120 μs Second suspend delay during erasure in suspend priority mode tDSESD2 - - 300 - - 300 μs Suspend delay during erasing in erasure priority mode tDSEED - - 300 - - 300 μs Forced stop command tFD - - 32 - - 20 μs Data hold time*3 *4 tDDRP 20 --20 --Year |
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