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S7G2 bảng dữ liệu(PDF) 104 Page - Renesas Technology Corp

tên linh kiện S7G2
Giải thích chi tiết về linh kiện  S7G2 Microcontroller Group
PDF  117 Pages
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nhà sản xuất  RENESAS [Renesas Technology Corp]
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S7G2 bảng dữ liệu(HTML) 104 Page - Renesas Technology Corp

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R01DS0262EU0150 Rev.1.50
Page 104 of 117
Sep 24, 2025
S7G2 Datasheet
2. Electrical Characteristics
2.14.2
Data Flash Memory Characteristics
Note 1. The reprogram/erase cycle is the number of erasures for each block. When the reprogram/erase cycle is n times
(n = 125,000), erasing can be performed n times for each block. For example, when 4-byte programming is
performed 16 times for different addresses in 64-byte blocks, and then the entire block is erased, the
reprogram/erase cycle is counted as one. However, programming the same address several times as one
erasure is not enabled. (Overwriting is prohibited.)
Note 2. This is the minimum number of times to guarantee all the characteristics after reprogramming. The guaranteed
range is from 1 to the minimum value.
Note 3. This indicates the characteristics when reprogramming is performed within the specified range, including the
minimum value.
Note 4. This result is obtained from reliability testing.
Table 2.54
Data flash memory characteristics
Conditions: Program or erase: FCLK = 4 to 60 MHz
Read: FCLK ≤ 60 MHz
Parameter
Symbol
FCLK = 4 MHz
20 MHz ≤ FCLK ≤ 60 MHz
Unit
Min
Typ
Max
Min
Typ
Max
Programming time
4-byte
tDP4
-
0.36
3.8
-
0.16
1.7
ms
Erasure time
64-byte
tDE64
-
3.1
18
-
1.7
10
ms
Blank check time
4-byte
tDBC4
-
-
84
-
-
30
μs
Reprogramming/erasure cycle*1
NDPEC
125000*2
-
-
125000*2
---
Suspend delay during programming
tDSPD
-
-
264
-
-
120
μs
First suspend delay during erasure in
suspend priority mode
tDSESD1
-
-
216
-
-
120
μs
Second suspend delay during erasure in
suspend priority mode
tDSESD2
-
-
300
-
-
300
μs
Suspend delay during erasing in erasure
priority mode
tDSEED
-
-
300
-
-
300
μs
Forced stop command
tFD
-
-
32
-
-
20
μs
Data hold time*3 *4
tDDRP
20
--20
--Year



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