S75WS256NDFBAWMB datasheet(202/216 Pages) SPANSION

202 / 216 page

200

S75WS256Nxx Based MCPs

S75WS-N-00_A0 February 17, 2005

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Inf o rmation

Table 34.18 Read Timing Parameters—Burst Write Followed by Burst Read

Symbol

70ns/80 MHz

85ns/66 MHz

Units

Min

Max

Min

Max

tACLK

911

tBOE

tCLK

12.5

tCSP

tHD

tKOH

tOHZ

tSP

Notes:

1. Non-default BCR settings: Latency code two (three clocks); Wait active Low; Wait asserted during delay.

1. When transitioning between asynchronous and variable-latency burst operations, CE# must go High. If CE# goes High, it must remain High

for at least 5ns (tCBPH) to schedule the appropriate internal refresh operation. See How Extended Timings Impact CellularRAM™ Operation

for restrictions on the maximum CE# Low time (tCEM).

Figure 34.18 Asynchronous Write Followed by Burst Read

tOHZ

High-Z

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VIH

VIL

VOH

VOL

A[22:0]

ADV#

CE#

LB#/UB#

DQ[15:0]

WAIT

tCSP

tSP

tHD

VIH

VIL

OE#

WE#

tSP

tHD

tCLK

VIH

VIL

CLK

tBOE

Valid

Address

tWC

(Note 2)

tWP tWPH

tSP

tHD

Valid

Output

Valid

Output

Valid

Output

Valid

Output

VOH

VOL

tKOH

tACLK

High-Z

Don't Care

Undefined

Legend:

Valid

Address

Valid

Address

tCKA

tSP

tHD

tBW

tCW

tAW

tWR

tCBPH

tWC

tCEW

DATA

tWHZ

DATA

tVPH

tAVS

tAVH

tVP

tVS

tCVS

tAS

tDH

tDW

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