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STM32H723VG bảng dữ liệu(PDF) 118 Page - STMicroelectronics |
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STM32H723VG bảng dữ liệu(HTML) 118 Page - STMicroelectronics |
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118 / 227 page ![]() Electrical characteristics STM32H723xE/G 118/227 DS13313 Rev 2 Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015 “Software techniques for improving microcontrollers EMC performance”). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application, executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2 standard which specifies the test board and the pin loading. 6.3.14 Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC JS-001 and ANSI/ESDA/JEDEC JS-002 standards. Table 46. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fCPU] Unit 8/550 MHz SEMI Peak level VDD = 3.6 V, TA = 25 °C, LQFP176 package, conforming to IEC61967-2 0.1 to 30 MHz 14 dBµV 30 to 130 MHz 20 130 MHz to 1 GHz 27 1 GHz to 2 GHz 17 EMI Level 4 - Table 47. ESD absolute maximum ratings Symbol Ratings Conditions Packages Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = 25 °C conforming to ANSI/ESDA/JEDEC JS-001 All packages 2 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C conforming to ANSI/ESDA/JEDEC JS-002 All LQFP packages C1 250 All BGA and WLCSP packages C2a 500 1. Guaranteed by characterization results. |
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