STM32H723VG datasheet(95/227 Pages) STMICROELECTRONICS

95 / 227 page

DS13313 Rev 2

95/227

STM32H723xE/G

Electrical characteristics

208

6.3.5

Embedded reference voltage characteristics

The parameters given in Table 17 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 12: General operating

conditions.

VAVM_0

Analog voltage detector for

VDDA threshold 0

Rising edge

1.66

1.71

1.76

Falling edge

1.56

1.61

1.66

VAVM_1

Analog voltage detector for

VDDA threshold 1

Rising edge

2.06

2.12

2.19

Falling edge

1.96

2.02

2.08

VAVM_2

Analog voltage detector for

VDDA threshold 2

Rising edge

2.42

2.50

2.58

Falling edge

2.35

2.42

2.49

VAVM_3

Analog voltage detector for

VDDA threshold 3

Rising edge

2.74

2.83

2.91

Falling edge

2.64

2.72

2.80

Vhyst_VDDA

Hysteresis of VDDA voltage

detector

100

IDD_PVM

PVM consumption from

VDD(1)

0.25

µA

IDD_VDDA

Voltage detector

consumption on VDDA(1)

Resistor bridge

2.5

µA

1. Guaranteed by design.

Table 16. Reset and power control block characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 17. Embedded reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltages

-40°C < TJ < TJmax

1.180

1.216

1.255

tS_vrefint(1)(2)

(3)

ADC sampling time when

reading the internal reference

voltage

-4.3

µs

tS_vbat(2)

VBAT sampling time when

reading the internal VBAT

reference voltage

-9

tstart_vrefint(2)

Start time of reference voltage

buffer when ADC is enable

4.4

Irefbuf(2)

Reference Buffer

consumption for ADC

VDD = 3.3 V

13.5

µA

ΔV

REFINT

(2)

Internal reference voltage

spread over the temperature

range

-40°C < TJ < TJmax

-5

Tcoeff(2)

Average temperature

coefficient

Average temperature

coefficient

-20

ppm/°C

VDDcoeff(2)

Average Voltage coefficient

3.0 V < VDD < 3.6 V

1370

ppm/V

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