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STM32H723VG bảng dữ liệu(PDF) 116 Page - STMicroelectronics |
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STM32H723VG bảng dữ liệu(HTML) 116 Page - STMicroelectronics |
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116 / 227 page ![]() Electrical characteristics STM32H723xE/G 116/227 DS13313 Rev 2 6.3.12 Memory characteristics Flash memory The characteristics are given at TJ = –40 to 125 °C unless otherwise specified. The devices are shipped to customers with the Flash memory erased. Table 42. Flash memory characteristics Symbol Parameter Conditions Min Typ Max Unit IDD Supply current Write / Erase 8-bit mode - 6.5 - mA Write / Erase 16-bit mode - 11.5 - Write / Erase 32-bit mode - 20 - Write / Erase 64-bit mode - 35 - Table 43. Flash memory programming Symbol Parameter Conditions Min(1) Typ Max(1) Unit tprog Word (266 bits) programming time Program/erase parallelism x 8 - 290 580(2) µs Program/erase parallelism x 16 - 180 360 Program/erase parallelism x 32 - 130 260 Program/erase parallelism x 64 - 100 200 tERASE Sector (128 Kbytes) erase time Program/erase parallelism x 8 - 2 4 s Program/erase parallelism x 16 - 1.8 3.6 Program/erase parallelism x 32 - tME Mass erase time (1 Mbyte) Program/erase parallelism x 8 - 3 26 Program/erase parallelism x 16 - 8 16 Program/erase parallelism x 32 - 6 12 Program/erase parallelism x 64 - 5 10 Vprog Programming voltage Program parallelism x 8 1.62 - 3.6 V Program parallelism x 16 Program parallelism x 32 Program parallelism x 64 1.8 - 3.6 1. Guaranteed by characterization results. 2. The maximum programming time is measured after 10K erase operations. Table 44. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) Unit NEND Endurance TJ = –40 to +125 °C 10 kcycles tRET Data retention 1 kcycle at TA = 85 °C 30 Years 10 kcycles at TA = 55 °C 20 |
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