L6706TR datasheet(12/47 Pages) STMICROELECTRONICS

12 / 47 page

Electrical specifications

L6706

12/47

Doc ID 15698 Rev 2

EA slew-rate

COMP = 10 pF to SGND

μs

Differential current sensing and offset

VOCSET

OCSET pin voltage

1.120 1.260 1.400

KIDROOP

Droop current deviation from

nominal value

Rg = 1 k

Ω; I

DROOP = 25 μA;

-2

μA

KIOFFSET

Offset current accuracy

IOFFSET = 50 μA to 250 μA-5

IOFFSET

OFFSET current range

250

μA

VOFFSET

OFFSET pin bias

IOFFSET = 0 to 250 μA1.240

Gate drivers

tRISE UGATE

High side rise time

BOOT-PHASE = 12 V;

CUGATE to PHASE = 3.3 nF

IUGATE

High side source current

BOOT-PHASE = 12 V

1.5

RUGATE

High side sink resistance

BOOT-PHASE = 12 V

1.8

tRISE LGATE

Low side rise time

VCCDR = 12 V;

CLGATE to PGND = 5.6 nF

ILGATE

Low side source current

VCCDR = 12 V

RLGATE

Low side sink resistance

VCCDR = 12 V

1.2

Protections

OVP

Over voltage protection

(VSEN rising)

Before VBOOT

1.24

1.300

Above VID (after TD3)

150

175

200

Programmable

OVP

IOVP current

OVP = SGND

μA

Comparator offset voltage

OVP = 1.800 V

-20

Pre-OVP

Preliminary over voltage

protection

UVLOOVP < VCC < UVLOVCC

VCC> UVLOVCC and OUTEN = SGND

VSEN rising

1.750 1.800 1.850

Hysteresis

350

UVP

Under voltage threshold

VSEN falling; below VID

550

600

650

VSSEND

SS_END voltage low

I = -4 mA

0.4

Table 5.

Electrical characteristics (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

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