R34DS0012EU0504 Rev.5.04

Page 11

Sep 18, 2025

ISL73141SEH Datasheet

3.5.2

3.3V Operation

SCK Held Low to CS↓

tQUIET

-

40

--

ns

CS Falling Edge to BUSY↑

tBUSYLH

CL = 10pF

-

17

25

ns

SCK Period

tSCK

-

20

--

ns

SCK High Time

tSCKH

-

8

--

ns

SCK Low Time

tSCKL

-

8

--

ns

SDO Data Valid Delay from

BUSY↓

tDBUSYLSDO

V

CL = 10pF

-

-2.6

0

ns

SDO Data Valid Delay from SCK↑

tDSCKSDOV

CL = 10pF

-

-

18.5

ns

SDO Data Valid Hold Time from

SCK↑

tHSDOV

CL = 10pF

8

13

-

ns

SDO Bus Acquisition Time from

CS↓

tDCSLSDOL

CL = 10pF

-

11

20

ns

SDO Bus Relinquish Time after

CS↑

tDCSHSDOZ

CL = 10pF

-

12

20

ns

Wake-Up time from Power-Down

Mode

tWAKE

Time to wait after PD↑ to first

sample

-20

-

µs

1. Typical values shown are not guaranteed. Values derived from +25°C median data.

Unless otherwise noted: AVCC = 3.0V to 3.6V; DVCC = 2.2V to 3.6V, REF = 3.0V, GND = 0V, fSAMP = 750ksps, AIN = -1dBFS. Boldface limits

apply across the operating temperature range, -55°C to +125°C by production testings; over a total ionizing dose of 75krad(Si) at

+25°C with exposure at a low dose rate of <10mrad(Si)/s.

Parameter

Symbol

Test Conditions

Min

Typ[1]

Max

Unit

Timing Characteristics

Maximum Sampling Frequency

fSAMP

--

-

750

kHz

Conversion Time

tCONV

BUSY Output High Time

-

760

850

ns

CS High Time

tCSH

-

50

--

ns

SCK Held Low to CS↓

tQUIET

-

50

--

ns

CS Falling Edge to BUSY↑

tBUSYLH

CL = 10pF

-

21

40

ns

SCK Period

tSCK

-

30

--

ns

SCK High Time

tSCKH

-

12

--

ns

SCK Low Time

tSCKL

-

12

--

ns

SDO Data Valid Delay from BUSY↓

tDBUSYLSDO

V

CL = 10pF

-

-5

0

ns

SDO Data Valid Delay from SCK↑

tDSCKSDOV

CL = 10pF

-

-

25

ns

SDO Data Valid Hold Time from

SCK↑

tHSDOV

CL = 10pF

8

16

-

ns

SDO Bus Acquisition Time from

CS↓

tDCSLSDOL

CL = 10pF

-

12

30

ns

Unless otherwise noted: AVCC = 4.5V to 5.5V; DVCC = 2.2V to 3.6V, REF = 4.096V, GND = 0V, fSAMP = 1Msps, AIN = -1dBFS. Boldface limits

apply across the operating temperature range, -55°C to +125°C by production testings; over a total ionizing dose of 75krad(Si) at

+25°C with exposure at a low dose rate of <10mrad(Si)/s.

Parameter

Symbol

Test Conditions

Min

Typ[1]

Max

Unit