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ISL73141SEHF7/PROTO bảng dữ liệu(PDF) 8 Page - Renesas Technology Corp

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R34DS0012EU0504 Rev.5.04
Page 8
Sep 18, 2025
ISL73141SEH Datasheet
3.4.2
ISL73141SEHMFN - 3.3V Operation
Analog Supply Current -
Static
IStatic
CS held High
-
4.3
7
mA
Analog Supply Current -
Sleep
ISLAVCC
PD held Low
-
4.8
12
µA
Digital Supply Voltage
DVCC
-
2.2
-
3.6
V
Digital Supply Current -
Active
IDVCC
fSCK = 50MHz
-
72
90
µA
Digital Supply Current -
Static
ISTDVCC
CS held High
-
26.4
35
µA
Digital Supply Current -
Sleep
ISLDVCC
PD held Low
-
6
8
µA
PD
PACTIVE
Sample rate = 1Msps
-
60
72.8
mW
PSTATIC
CS held High
-
21.6
35.1
mW
PSLEEP
PD held Low
-
39
80
µW
Digital Inputs and Outputs (PD, CS, SCK, BUSY, SDO)
High Level Input
VIH
-
0.8×DVCC
--
V
Low Level Input
VIL
--
-
0.2×DVCC
V
Input Current (CS, SCK)
IIN
VIN = 0V to DVCC
-1
-
1
µA
Input Capacitance
CIN
--
5
-
pF
High Level Output
VOH
DVCC - Output, IO = -500µA
DVCC - 0.2
--
V
Low Level Output
VOL
IO = 500µA
-
-
0.2
V
Output Source Current
ISRC
VOUT = 0V to DVCC
--10
-
mA
Output Sink Current
ISNK
VOUT = 0V to DVCC
-10
-
mA
Hi-Z Output Leakage
Current
IOZ
VOUT = 0V to DVCC
-1
1
µA
PD Input Resistance
RINPDL
Internal pull-up resistance to DVCC
400
500
600
kΩ
1. Typical values shown are not guaranteed. Values derived from +25°C median data.
Unless otherwise noted: AVCC = 3.3V; DVCC = 2.5V, REF = 3.0V, GND = 0V, fSAMP = 750ksps, AIN = -1dBFS. Boldface limits apply across
the operating temperature range, -55°C to +125°C by production testings; over a total ionizing dose of 75krad(Si) at +25°C with
exposure at a low dose rate of <10mrad(Si)/s.
Parameter
Symbol
Test Conditions
Min
Typ[1]
Max
Unit
Converter Characteristics
Resolution
-
-
14
--
bits
No Missing Codes
-
-
14
--
bits
Transition Noise
-
RMS noise, 14-bit LSB
-
0.4
-
LSBRM
S
Integral Non-Linearity
INL
Measured with full scale input signal
-1.5
±0.5
1.5
LSB
Differential Non-Linearity
DNL
Measured with full scale input signal
-0.5
±0.25
0.5
LSB
Zero Scale Error
VOFF
Measured with input grounded
-5
0
5
LSB
Unless otherwise noted: AVCC = 5.0V; DVCC = 2.5V, REF = 4.096V, GND = 0V, fSAMP = 1Msps, AIN = -1dBFS.Boldface limits apply across
the operating temperature range, -55°C to +125°C by production testings; over a total ionizing dose of 75krad(Si) at +25°C with
exposure at a low dose rate of <10mrad(Si)/s. (Cont.)
Parameter
Symbol
Test Conditions
Min
Typ[1]
Max
Unit



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