R34DS0012EU0504 Rev.5.04

Page 10

Sep 18, 2025

ISL73141SEH Datasheet

3.4.3

ISL73141SEHMF7 - 5.0V Operation Burn-In Deltas

3.4.4

ISL73141SEHMFN - 3.3V Operation Burn-In Deltas

3.5

Timing Specifications

3.5.1

5V Operation

Digital Inputs and Outputs (PD, CS, SCK, BUSY, SDO)

High Level Input

VIH

-

0.8×DVCC

--

V

Low Level Input

VIL

--

-

0.2×DVCC

V

Input Current (CS, SCK)

IIN

VIN = 0V to DVCC

-1

-

1

µA

Input Capacitance

CIN

--

5

-

pF

High Level Output

VOH

DVCC - Output, IO = -500µA

DVCC - 0.2

--

V

Low Level Output

VOL

IO = 500µA

-

-

0.2

V

Output Source Current

ISRC

VOUT = 0V to DVCC

--10

-

mA

Output Sink Current

ISNK

VOUT = 0V to DVCC

-10

-

mA

Hi-Z Output Leakage Current

IOZ

VOUT = 0V to DVCC

-1

-

1

µA

PD Input Resistance

RINPDL

Internal pull-up resistance to DVCC

400

500

600

kΩ

1. Typical values shown are not guaranteed. Values derived from +25°C median data.

AVCC = 5.0V; DVCC = 2.5V, REF = 4.096V, GND = 0V, fSAMP = 1000ksps, AIN = -1dBFS; TA = +25°C; unless otherwise noted.

Parameter

Symbol

Test Conditions

Min

Max

Unit

Integral Non-Linearity

INL

Measured with full scale input signal

-0.35

0.35

LSB

Signal to Noise Ratio

SNR

FIN = 105kHz

-1

1

dBFS

Effective Number of Bits

ENOB

FIN = 105kHz

-0.2

0.2

bits

AVCC = 3.3V; DVCC = 2.5V, REF = 3.0V, GND = 0V, fSAMP = 750ksps, AIN = -1dBFS; TA = +25°C;unless otherwise noted.

Parameter

Symbol

Test Conditions

Min

Max

Unit

Integral Non-Linearity

INL

Measured with full scale input signal

-0.5

0.5

LSB

Signal to Noise Ratio

SNR

FIN = 105kHz

-1

1

dBFS

Effective Number of Bits

ENOB

FIN = 105kHz

-0.2

0.2

bits

Unless otherwise noted: AVCC = 4.5V to 5.5V; DVCC = 2.2V to 3.6V, REF = 4.096V, GND = 0V, fSAMP = 1Msps, AIN = -1dBFS. Boldface limits

apply across the operating temperature range, -55°C to +125°C by production testings; over a total ionizing dose of 75krad(Si) at

+25°C with exposure at a low dose rate of <10mrad(Si)/s.

Parameter

Symbol

Test Conditions

Min

Typ[1]

Max

Unit

Timing Characteristics

Maximum Sampling Frequency

fSAMP

--

-

1

MHz

Conversion Time

tCONV

BUSY Output High Time

-

595

665

ns

CS High Time

tCSH

-

40

--

ns

Unless otherwise noted: AVCC = 3.3V; DVCC = 2.5V, REF = 3.0V, GND = 0V, fSAMP = 750ksps, AIN = -1dBFS. (Cont.)Boldface limits apply

across the operating temperature range, -55°C to +125°C by production testings; over a total ionizing dose of 75krad(Si) at +25°C

with exposure at a low dose rate of <10mrad(Si)/s. (Cont.)

Parameter

Symbol

Test Conditions

Min

Typ[1]

Max

Unit