R34DS0012EU0504 Rev.5.04

Page 9

Sep 18, 2025

ISL73141SEH Datasheet

Zero Scale Error Drift,

VOFFD

Measured with input grounded

-

±0.01

-

LSB/°C

Full Scale Error

FSE

Measured with input connected to

VREF

-7

±1

7

LSB

Full Scale Error Drift

FSED

Measured with input connected to

VREF

-

±0.02

-

LSB/°C

Dynamic Accuracy

Signal to Noise Ratio

SNR

FIN = 105kHz

77

80.3

-

dB

Signal to Noise + Distortion

Ratio

SINAD

FIN = 105kHz

76

80.1

-

dB

Effective Number of Bits

ENOB

FIN = 105kHz

12.3

12.8

-

bits

Total Harmonic Distortion

THD

FIN = 105kHz, first five harmonics

85

92

-

dB

Spurious Free Dynamic Range

SFDR

FIN = 105kHz, first five harmonics

excluded

90

108

-

dB

Input Bandwidth

-

Source impedance = 25Ω, -3dB

point

-50

-

MHz

Aperture Delay

tAD

CS falling edge to sample edge

-

4

-

ns

Aperture Jitter

tAJITTER

--

1

-

psRMS

Analog Input Characteristics (AIN)

Input Voltage Range, AIN

AIN

Recommended operating condition

0

-

VREF

V

Absolute Input Range, AIN

--

-0.1

-

AVCC + 0.1

V

Input Leakage Current

IAIN

-

-1

-

1

µA

Input Capacitance

-

Sample Mode

-

15

-

pF

Hold Mode

-

3

-

pF

Reference Input Characteristics (REF)

REF Input Voltage Range

VREF

-

1.95

-

AVCC

V

REF Input Current

IREF

--

82

150

µA

Power Supply Characteristics (AVCC, DVCC)

Analog Supply Voltage

AVCC

-

3

-

3.6

V

Analog Supply Current - Active

IAVCC

Active, fSAMP = 750ksps

-

8.5

10.5

mA

Analog Supply Current - Static

IStatic

CS held High

-

3.7

6.5

mA

Analog Supply Current - Sleep

ISLAVCC

PD held Low

-

4.6

10

µA

Digital Supply Voltage

DVCC

2.2

-

3.6

V

Digital Supply Current - Active

IDVCC

fSCK = 33MHz, 10pF load

-

70

90

µA

Digital Supply Current - Static

ISTDVCC

CS held High

-

27

35

µA

Digital Supply Current - Sleep

ISLDVCC

PD held Low

-

6

8

µA

PD

PACTIVE

Sample rate = 750ksps

-

28

33.9

mW

PSTATIC

CS held High

-

12.3

21.6

mW

PSLEEP

PD held Low

-

30.2

53

µW

Unless otherwise noted: AVCC = 3.3V; DVCC = 2.5V, REF = 3.0V, GND = 0V, fSAMP = 750ksps, AIN = -1dBFS. (Cont.)Boldface limits apply

across the operating temperature range, -55°C to +125°C by production testings; over a total ionizing dose of 75krad(Si) at +25°C

with exposure at a low dose rate of <10mrad(Si)/s. (Cont.)

Parameter

Symbol

Test Conditions

Min

Typ[1]

Max

Unit