STM32H723VG datasheet(203/227 Pages) STMICROELECTRONICS

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DS13313 Rev 2

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STM32H723xE/G

Electrical characteristics

208

USB OTG_FS characteristics

Unless otherwise specified, the parameters given in Table 114 for ULPI are derived from

tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage

summarized in Table 12: General operating conditions, with the following configuration:

•

Output speed is set to OSPEEDRy[1:0] = 11

•

Capacitive load CL=20 pF

•

Measurement points are done at CMOS levels: 0.5VDD

•

IO Compensation cell activated.

•

VOS level set to VOS0

Refer to Section 6.3.16: I/O port characteristics for more details on the input/output

characteristics.

USB OTG_HS characteristics

Unless otherwise specified, the parameters given in Table 114 for ULPI are derived from

tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage

summarized in Table 12: General operating conditions, with the following configuration:

•

Output speed is set to OSPEEDRy[1:0] = 11

•

Capacitive load CL=20 pF

•

Measurement points are done at CMOS levels: 0.5VDD

•

IO Compensation cell activated.

•

VOS level set to VOS0

Refer to Section 6.3.16: I/O port characteristics for more details on the input/output

characteristics.

Table 113. USB OTG_FS electrical characteristics

Symbol

Parameter

Condition

Min

Typ

Max

Unit

VDD33US

USB transceiver operating voltage

3.0(1)

1. The USB functionality is ensured down to 2.7 V. However, not all USB electrical characteristics are

degraded in the 2.7 to 3.0 V voltage range.

-3.6

RPUI

Embedded USB_DP pull-up value

during idle

900

1250

1600

Ω

RPUR

Embedded USB_DP pull-up value

during reception

1400

2300

3200

ZDRV

Output driver impedance(2)

2. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-); the matching

impedance is already included in the embedded driver.

Driver high

and low

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