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STM32H723VG bảng dữ liệu(PDF) 111 Page - STMicroelectronics |
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STM32H723VG bảng dữ liệu(HTML) 111 Page - STMicroelectronics |
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111 / 227 page ![]() DS13313 Rev 2 111/227 STM32H723xE/G Electrical characteristics 208 4 MHz low-power internal RC oscillator (CSI) Low-speed internal (LSI) RC oscillator Table 36. CSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fCSI CSI frequency VDD=3.3 V, TJ=30 °C 3.96(2) 44.04(2) MHz TRIM CSI trimming step Trimming is not a multiple of 16 - 0.40 0.75 % Trimming is a multiple of 32 −4.75 −2.75 0.75 Other trimming values not multiple of 16 (excluding multiple of 32) −0.43 0.00 0.75 DuCy(CSI) Duty cycle - 45 - 55 % ∆TEMP (CSI) CSI oscillator frequency drift over temperature TJ = 0 to 85 °C −3.7(3) -4.5(3) % TJ = −40 to 125 °C −11(3) -7.5(3) ∆VDD (CSI) CSI oscillator frequency drift over VDD VDD = 1.62 to 3.6 V − 0.06 -0.06 % tsu(CSI) CSI oscillator startup time - - 1 2 µs tstab(CSI) CSI oscillator stabilization time (to reach ± 3% of fCSI) - - - 4 cycle IDD(CSI) CSI oscillator power consumption - - 23 30 µA 1. Guaranteed by design, unless otherwise specified. 2. Guaranteed by test in production. 3. Guaranteed by characterization results. Table 37. LSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fLSI LSI frequency VDD = 3.3 V, TJ = 25 °C 31.4(1) 32 32.6(1) kHz TJ = –40 to 110 °C, VDD = 1.62 to 3.6 V 29.76(2) - 33.6(2) TJ = –40 to 125 °C, VDD = 1.62 to 3.6 V 29.4(2) - 33.6(2) tsu(LSI)(3) LSI oscillator startup time - - 80 130 µs tstab(LSI)(3) LSI oscillator stabilization time (5% of final value) - - 120 170 IDD(LSI)(3) LSI oscillator power consumption - - 130 280 nA 1. Guaranteed by test in production. 2. Guaranteed by characterization results. 3. Guaranteed by design. |
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