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STM32H723VG bảng dữ liệu(PDF) 111 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  32-bit Arm® Cortex®-M7 550 MHz MCU, up to 1 MB Flash memory, 564 KB RAM, 35 comms peripherals and analog interfaces
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DS13313 Rev 2
111/227
STM32H723xE/G
Electrical characteristics
208
4 MHz low-power internal RC oscillator (CSI)
Low-speed internal (LSI) RC oscillator
Table 36. CSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fCSI
CSI frequency
VDD=3.3 V, TJ=30 °C
3.96(2)
44.04(2)
MHz
TRIM
CSI trimming step
Trimming is not a
multiple of 16
-
0.40
0.75
%
Trimming is a multiple
of 32
−4.75
−2.75
0.75
Other trimming values
not multiple of 16
(excluding multiple of
32)
−0.43
0.00
0.75
DuCy(CSI)
Duty cycle
-
45
-
55
%
∆TEMP (CSI)
CSI oscillator frequency drift over
temperature
TJ = 0 to 85 °C
−3.7(3)
-4.5(3)
%
TJ = −40 to 125 °C
−11(3)
-7.5(3)
∆VDD (CSI)
CSI oscillator frequency drift over
VDD
VDD = 1.62 to 3.6 V
−
0.06
-0.06
%
tsu(CSI)
CSI oscillator startup time
-
-
1
2
µs
tstab(CSI)
CSI oscillator stabilization time
(to reach ± 3% of fCSI)
-
-
-
4
cycle
IDD(CSI)
CSI oscillator power consumption
-
-
23
30
µA
1. Guaranteed by design, unless otherwise specified.
2. Guaranteed by test in production.
3. Guaranteed by characterization results.
Table 37. LSI oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fLSI
LSI frequency
VDD = 3.3 V, TJ = 25 °C
31.4(1)
32
32.6(1)
kHz
TJ = –40 to 110 °C,
VDD = 1.62 to 3.6 V
29.76(2)
-
33.6(2)
TJ = –40 to 125 °C,
VDD = 1.62 to 3.6 V
29.4(2)
-
33.6(2)
tsu(LSI)(3) LSI oscillator startup time
-
-
80
130
µs
tstab(LSI)(3)
LSI oscillator stabilization time
(5% of final value)
-
-
120
170
IDD(LSI)(3) LSI oscillator power consumption
-
-
130
280
nA
1. Guaranteed by test in production.
2. Guaranteed by characterization results.
3. Guaranteed by design.



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