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STM32H723VG bảng dữ liệu(PDF) 109 Page - STMicroelectronics

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DS13313 Rev 2
109/227
STM32H723xE/G
Electrical characteristics
208
Note:
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 16. Typical application with a 32.768 kHz crystal
1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one.
6.3.10
Internal clock source characteristics
The parameters given in Table 34 to Table 36 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 12: General
operating conditions.
48 MHz high-speed internal RC oscillator (HSI48)
ai17531c
STM32
OSC32_OUT
fHSE
CL1
RF
32.768 kHz
resonator
Bias
controlled
gain
OSC32_IN
CL2
Resonator with
integrated capacitors
Table 34. HSI48 oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI48
HSI48 frequency
VDD=3.3 V,
TJ=30 °C
47.5(1)
48
48.5(1) MHz
TRIM(2)
USER trimming step
-
-
0.175
0.250
%
USER TRIM
COVERAGE(3)
USER TRIMMING coverage
± 32 steps
±4.70
±5.6
-
%
DuCy(HSI48)(2)
Duty Cycle
-
45
-
55
%
ACCHSI48_REL(3)(4)
Accuracy of the HSI48 oscillator over
temperature (factory calibrated)
TJ=-40 to 125 °C
–4.5
-
3.5
%
∆VDD(HSI48)(2)(5)
HSI48 oscillator frequency drift with
VDD(6) (the reference is 3.3 V)
VDD=3 to 3.6 V
-
0.025
0.05
%
VDD=1.62 V to 3.6 V
-
0.05
0.1
tsu(HSI48)(2)
HSI48 oscillator start-up time
-
-
2.1
4.0
µs
IDD(HSI48)(2)
HSI48 oscillator power consumption
-
-
350
400
µA
NT jitter(2)
Next transition jitter
Accumulated jitter on 28 cycles(7)
-
-
± 0.15
-
ns
PT jitter(2)
Paired transition jitter
Accumulated jitter on 56 cycles(7)
-
-
± 0.25
-
ns
1. Guaranteed by test in production.
2. Guaranteed by design.
3. Guaranteed by characterization results.
4.
∆fHSI = ACCHSI48_REL + ∆VDD.



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