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STM32H723VG bảng dữ liệu(PDF) 102 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  32-bit Arm® Cortex®-M7 550 MHz MCU, up to 1 MB Flash memory, 564 KB RAM, 35 comms peripherals and analog interfaces
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Electrical characteristics
STM32H723xE/G
102/227
DS13313 Rev 2
I/O system current consumption
The current consumption of the I/O system has two components: static and dynamic.
Table 26. Typical current consumption in Stop mode
Symbol Parameter
Conditions
Typ
Max(1)
1. Guaranteed by characterization results.
Unit
TJ =
25 °C
TJ =
85 °C
TJ =
105 °C
TJ =
125 °C
IDD(Stop)
Supply
current in
Stop and
DStop
modes
Flash memory in low
power mode
SVOS5
0.52
3.7
26
44
72
mA
SVOS4
0.81
6.1
39
64
110
SVOS3
1.15
8.6
51
82
130
Flash memory in
normal mode
SVOS5
0.535
3.7
26
44
72
SVOS4
0.96
6.2
39
64
110
SVOS3
1.45
8.8
51
83
130
Table 27. Typical current consumption in Standby mode
Symbol
Parameter
Conditions
Typ(1)
1. These values are given for PDR OFF. When the PDR is ON, the typical current consumption is increased
(refer to Table 16: Reset and power control block characteristics.
Max at 3.6 V(2)
2. Guaranteed by characterization results.
Unit
Backup
SRAM
RTC
and
LSE(3)
3. The LSE is in Low-drive mode.
1.65
V
2.4 V
3 V
3.3 V
TJ =
25 °
C
TJ =
85 °
C
TJ =
105 °
C
TJ =
125 °
C
IDD
(Standby)
Supply
current in
Standby
mode,
IWDG OFF
OFF
OFF
2.2
2.35
2.5
2.8
-
-
-
-
µA
ON
OFF
3.5
3.7
4
4.3
-
-
-
-
OFF
ON
2.2
2.4
2.85
3.25
4.5
15
30
64
ON
ON
3.5
3.8
4.35
4.75
8.3
39
75
140
Table 28. Typical and maximum current consumption in VBAT mode
Sym-
bol
Para-
meter
Conditions
Typ
Max at 3.6 V(1)(2)
1. Guaranteed by characterization results.
2. The LDO regulator is used before switching to VBAT mode.
Back-up
SRAM
RTC
and
LSE(3)
3. The LSE is in Low-drive mode.
1.2 V
2 V
3 V
3.3 V
TJ = 2
5 °C
TJ =
85 °C
TJ =
105 °
C
TJ =
125 °
C
IDD
(VBAT)
Supply
current in
VBAT
mode
OFF
OFF
0.008
0.01
0.025
0.05
0.3
3.1
7.4
18
ON
OFF
1.5
1.7
1.9
1.9
4
28
53
91
OFF
ON
0.4
0.5
0.75
0.8
-
-
-
-
ON
ON
1.8
2.1
2.8
3.2
-
-
-
-



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