MB91460C datasheet(93/106 Pages) CYPRESS

93 / 106 page

Document Number: 002-04609 Rev. *A

Page 93 of 106

MB91460C Series

15.6 FLASH memory program/erase characteristics

15.6.1 MB91F463CA, MB91F465CA

(TA = 25oC, Vcc = 5.0V)

*1: This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high

temperature measurements into normalized value at 85oC)

15.6.2 MB91F467Cx

(TA = 25oC, Vcc = 5.0V)

*1: This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high

temperature measurements into normalized value at 85oC)

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

0.9

3.6

Erasure programming time not included

Chip erase time

n*0.9

n*3.6

n is the number of Flash sector of the device

Word (16-bit width) programming

time

-23

370

μs

System overhead time not included

Programme/Erase cycle

10 000

cycle

Flash data retention time

year

Parameter

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

0.5

2.0

Erasure programming time not included

Chip erase time

n*0.5

n*2.0

n is the number of Flash sector of the device

Word (16-bit or 32-bit width) pro-

gramming time

100

μs

System overhead time not included

Programme/Erase cycle

10 000

cycle

Flash data retention time

year

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